Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Andrew I. Yakimov"'
Autor:
Andrew I. Yakimov, Victor V. Kirienko, Aleksei A. Bloshkin, Dmitrii E. Utkin, Anatoly V. Dvurechenskii
Publikováno v:
Photonics, Vol 10, Iss 7, p 764 (2023)
We report on the near-infrared (NIR) photoresponse of a micropatterned Ge/Si quantum dot (QD) pin photodiode at different angles of radiation incidence. The photon-trapping hole array was etched through the n+-type top contact layer to reach the buri
Externí odkaz:
https://doaj.org/article/1e7ae95450cf4f4088e64cd079f47797
Publikováno v:
Nanomaterials, Vol 12, Iss 17, p 2993 (2022)
Photodetection based on assemblies of quantum dots (QDs) is able to tie the advantages of both the conventional photodetector and unique electronic properties of zero-dimensional structures in an unprecedented way. However, the biggest drawback of QD
Externí odkaz:
https://doaj.org/article/9d71ce0d01aa4f239804c6eb982785ab
Autor:
Andrew I. Yakimov, Victor V. Kirienko, Aleksei A. Bloshkin, Dmitrii E. Utkin, Anatoly V. Dvurechenskii
Publikováno v:
Nanomaterials, Vol 11, Iss 9, p 2302 (2021)
Group-IV photonic devices that contain Si and Ge are very attractive due to their compatibility with integrated silicon photonics platforms. Despite the recent progress in fabrication of Ge/Si quantum dot (QD) photodetectors, their low quantum effici
Externí odkaz:
https://doaj.org/article/ebdba8b8d4ca4c5bb4c3c34c3bdaf001
