Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Andrew E. Horch"'
Publikováno v:
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.
An embedded multi-time programmable (MTP) nonvolatile memory (NVM) has been developed in a standard 90nm logic process. Using a work function engineered tunneling device and 70A tunneling oxide, excellent endurance (>500k cycles) has been achieved. R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e2ca7ad9cd6b185dd05f86e19da452f
https://doi.org/10.1109/relphy.2007.370001
https://doi.org/10.1109/relphy.2007.370001
Publikováno v:
2005 IEEE International Integrated Reliability Workshop.
Some researchers have previously reported that silicide-blocking layers play a key role in retaining charge in embedded DRAM and Flash memory technologies. In this paper, we investigate the retention characteristics for silicided and unsilicided floa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12f5b308b539dfa80d638b39abfa6771
https://doi.org/10.1109/irws.2005.1609565
https://doi.org/10.1109/irws.2005.1609565
Publikováno v:
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..
An N-LDMOS (N-channel laterally diffused drain MOSFET), fabricated in a standard CMOS process, is used to provide relatively high-voltage (HV/spl sim/12 V) capability without any extra process steps. However, there is very little information availabl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::409633a46cce9b38f3ecf7b679ad3058
https://doi.org/10.1109/relphy.2005.1493189
https://doi.org/10.1109/relphy.2005.1493189