Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Andrew C. Yu"'
Autor:
Andrew C. Yuan, Steven A. Kivelson
Publikováno v:
npj Quantum Materials, Vol 9, Iss 1, Pp 1-7 (2024)
Abstract Josephson tunneling across a planar junction generally depends on the relative twist angle, θ, between the two layers. However, if under a discrete rotation, the order parameter in one layer is odd and the other is even (as, e.g., for a s-w
Externí odkaz:
https://doaj.org/article/fd7ea9da7d244e109a1ff1cf28f59700
Publikováno v:
IEEE Electron Device Letters. 43:486-489
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2436b9104d747e05305461be271a92c0
https://doi.org/10.1109/led.2022.3144936
https://doi.org/10.1109/led.2022.3144936
Publikováno v:
ACS Nano. 15:17310-17318
Electronics for space applications have stringent requirements on both performance and radiation tolerance. The constant exposure to cosmic radiation damages and eventually destroys electronics, limiting the lifespan of all space-bound missions. Thus
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::338b2499d33a7cba360f0992d74aea40
https://doi.org/10.1021/acsnano.1c04194
https://doi.org/10.1021/acsnano.1c04194
Publikováno v:
IEEE Solid-State Circuits Magazine. 11:86-97
By strongly leveraging technology scaling in its building blocks, the successive approximation architecture resides comfortably at both the high-speed and high-resolution frontiers of the analogto-digital conversion landscape [1]-[3]. This particular
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78f4e04ccdd941eaa1b7dce81ab02fe9
https://doi.org/10.1109/mssc.2019.2910647
https://doi.org/10.1109/mssc.2019.2910647
Autor:
Max M. Shulaker, Andrew C. Yu, Christian Lau, Tathagata Srimani, Aya G. Amer, Gage Hills, Mindy D. Bishop, Rebecca Ho, Minghan Chao, Pritpal Kanhaiya
Publikováno v:
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
While carbon nanotube (CNT) field-effect transistors (CNFETs) are a promising emerging nanotechnology for next-generation energy-efficient electronic systems, major challenges inherent to CNTs have prohibited their benefits from being realized. Here,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30f0680dad332cbe3c648f4c3c8990dc
https://doi.org/10.1109/vlsi-tsa48913.2020.9203734
https://doi.org/10.1109/vlsi-tsa48913.2020.9203734
Autor:
S. Soares, J. Humes, C. Cecman, B. Ferguson, A. Ratkovich, Max M. Shulaker, G. Clark, A. Chov, D. Aguilar, Andrew C. Yu, K. Kelley, M. Nelson, B. Jones, Anantha P. Chandrakasan, S. Burack, Pritpal Kanhaiya, P. Manos, Arvind, U. Suriono, Tathagata Srimani, H. Xue, Mindy D. Bishop, G. Michaelson, Christian Lau, M. Chao, Andrew Wright, Aya G. Amer, Gage Hills, M. C. Johnson, A. Bramer, S. Vuntangboon, Rebecca Ho, K. Mi
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
The inevitable slowing of two-dimensional scaling is motivating efforts to continue scaling along a new physical axis: the 3 rd dimension. Here we report back-end-of-line (BEOL) integration of multi-tier logic and memory established within a commerci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ca79f7c23441d6c9eb013bf4bd8e1d7
https://doi.org/10.1109/vlsitechnology18217.2020.9265083
https://doi.org/10.1109/vlsitechnology18217.2020.9265083
Autor:
Connor J. McClellan, Michal J. Mleczko, Eric Pop, Jean Anne C. Incorvia, Andrew C. Yu, Ching-Hua Wang, H.-S. Philip Wong
Publikováno v:
Nano Letters. 18:2822-2827
Black phosphorus (BP) is a promising two-dimensional (2D) material for nanoscale transistors, due to its expected higher mobility than other 2D semiconductors. While most studies have reported ambipolar BP with a stronger p-type transport, it is impo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f474e9997671fba9a71b8fd7fab6778d
https://doi.org/10.1021/acs.nanolett.7b05192
https://doi.org/10.1021/acs.nanolett.7b05192
Autor:
Stuart M. Cain, Sascha R. A. Alles, Ray Gopaul, Louis-Philippe Bernier, Andrew C. Yung, Andrew Bauman, Yi Yang, Glen B. Baker, Piotr Kozlowski, Brian A. MacVicar, Terrance P. Snutch
Publikováno v:
Molecular Brain, Vol 16, Iss 1, Pp 1-14 (2023)
Abstract Familial hemiplegic migraine type-1 (FHM-1) is a form of migraine with aura caused by mutations in the P/Q-type (Cav2.1) voltage-gated calcium channel. Pregabalin, used clinically in the treatment of chronic pain and epilepsy, inhibits P/Q-t
Externí odkaz:
https://doaj.org/article/7f60fbce64114253a4fc70c967d52dd5
Autor:
Christopher M. Smyth, Yong Cheol Shin, Yoshio Nishi, Victoria Chen, Michal J. Mleczko, Robert M. Wallace, Sukti Chatterjee, Yi-Chia Tsai, Eric Pop, Andrew C. Yu
Semiconducting MoTe2 is one of the few two-dimensional (2D) materials with a moderate band gap, similar to silicon. However, this material remains underexplored for 2D electronics due to ambient instability and predominantly p-type Fermi level pinnin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6812fb3d5964177a7b44124961d40a63
http://arxiv.org/abs/1907.02587
http://arxiv.org/abs/1907.02587
Publikováno v:
DRC
We present novel growth of the two-dimensional (2D) semiconductor MoS 2 directly on oxide/Si sidewalls as deep as $3\ \mu \mathrm{m}$ , demonstrating the first vertical 2D transistors with $I_{\mathrm{o}\mathrm{n}}/I_{\mathrm{off}} > 10^{7}$ and $I_{
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::076e0d2f611bb8f13f89c7b422a3d8b2
https://doi.org/10.1109/drc46940.2019.9046476
https://doi.org/10.1109/drc46940.2019.9046476