Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Andrew Burbine"'
Autor:
Germain Fenger, Kostas Adam, Kanstantsin Shchehlik, Yuri Granik, Andrew Burbine, Michael C. Lam, Clement Moyroud, Shashidhara K. Ganjugunte
Publikováno v:
Design-Process-Technology Co-optimization for Manufacturability XIII.
We show how combining machine learning with physical models can improve the overall accuracy of modeling the lithographic process for OPC applications by up to 40%. This level of model accuracy improvement is critical to meet the stringent requiremen
Autor:
Shumay Shang, Lianghong Yin, Andrew Burbine, John L. Sturtevant, Kostas Adam, Chris Clifford, Young-Chang Kim
Publikováno v:
Design-Process-Technology Co-optimization for Manufacturability XIII.
Critical edge placement margins continue to shrink in advanced designs, Over the years, various methods have been used to quantify the lithographic “process window”, often in terms of allowable CD variation. Ultimately however, what is of most in
Autor:
Angeline Chung, Thomas Thaler, Ao Chen, Andrew Burbine, Chris Clifford, Kostas Adam, John L. Sturtevant, Yee Mei Foong, Ute Buttgereit, Peter De Bisschop
Publikováno v:
33rd European Mask and Lithography Conference.
As nodes become smaller and smaller, the OPC applied to enable these nodes becomes more and more sophisticated. This trend peaks today in curve-linear OPC approaches that are currently starting to appear on the roadmap. With this sophistication of OP
Autor:
Ao Chen, Ute Buttgereit, Thomas Thaler, Chris Clifford, Yee Mei Foong, John L. Sturtevant, Andrew Burbine, Angeline Chung, Peter DeBisschop, Kostas Adam
Publikováno v:
SPIE Proceedings.
The appropriate representation of the photomask in the simulation of wafer lithography processes has been shown to be of vital importance for 14-nm and below [1]. This task is difficult, since accurate optical metrology and physical metrology of the
Publikováno v:
32nd European Mask and Lithography Conference.
The use of optical proximity correction (OPC) demands increasingly accurate models of the photolithographic process. Model building and analysis techniques in the data science community have seen great strides in the past two decades which make bette
Autor:
Erik Verduijn, Zac Levinson, Markus P. Benk, Bruce W. Smith, Antoine Wojdyla, Andrew Burbine, Pawitter Mangat, Kenneth A. Goldberg, Obert Wood
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VII.
We present an approach to image-based pupil plane amplitude and phase characterization using models built with principal component analysis (PCA). PCA is a statistical technique to identify the directions of highest variation (principal components) i
Publikováno v:
SPIE Proceedings.
The use of optical proximity correction (OPC) demands increasingly accurate models of the photolithographic process. Model building and inference techniques in the data science community have seen great strides in the past two decades which make bett
Publikováno v:
SPIE Proceedings.
In the field of model design and selection, there is always a risk that a model is over-fit to the data used to train the model. A model is well suited when it describes the physical system and not the stochastic behavior of the particular data colle
Autor:
J. Andres Torres, Germain Fenger, Joost Bekaert, Polina Krasnova, Roel Gronheid, Yuri Granik, Geert Vandenberghe, Yuansheng Ma, Andrew Burbine
Publikováno v:
SPIE Proceedings.
Significant interest from the integrated circuit (IC) industry has been placed on directed selfassembly (DSA) for sub 10nm nodes. DSA is being considered as a cost reduction complementary process to multiple patterning (MP) and an enabler of new tech
Autor:
Andrew Burbine, Bruce W. Smith, Zac Levinson, Kenneth A. Goldberg, Obert Wood, Erik Verduijn, Antoine Wojdyla, Markus P. Benk
Publikováno v:
Levinson, Z; Burbine, A; Verduijn, E; Wood, O; Goldberg, KA; Benk, MP; et al.(2017). Image-based pupil plane characterization via a space-domain basis. Journal of Micro/ Nanolithography, MEMS, and MOEMS, 16(2). doi: 10.1117/1.JMM.16.2.023509. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/5j99929s
Journal of Micro/Nanopatterning Materials and Metrology, vol 16, iss 2
Journal of Micro/ Nanolithography, MEMS, and MOEMS, vol 16, iss 2
Journal of Micro/Nanopatterning Materials and Metrology, vol 16, iss 2
Journal of Micro/ Nanolithography, MEMS, and MOEMS, vol 16, iss 2
© 2017 Society of Photo-Optical Instrumentation Engineers (SPIE). Aberration characterization plays a critical role in the development of any optical system. State-of-the-art lithography systems have the tightest aberration tolerances. We present an