Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Andrew Brendler"'
Publikováno v:
Microelectronics Reliability. 49:1498-1502
In industry, negative bias temperature instability (NBTI) mechanism degradation models are derived from regression analysis of stress data. The model exponents vary for different technologies and manufacturers. We will show that limited sampling (usi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c871383b90cc577cf0036da195436776
https://doi.org/10.1016/j.microrel.2009.06.009
https://doi.org/10.1016/j.microrel.2009.06.009
Autor:
Mark C. Kelling, Bernd Schulz, Jon-Tobias Hoeft, Matthew Sendelbach, William A. Muth, Benjamin Bunday, M. Zaitz, Andrew Brendler, Alok Vaid, Eric P. Solecky, Ron Fiege, Bill Banke, Srinivasan Rangarajan, Carlos Strocchia-Rivera, Andres Munoz, Carsten Hartig, John A. Allgair, Dmitriy Shneyder, Chas Archie
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXIII.
Ever shrinking measurement uncertainty requirements are difficult to achieve for a typical metrology toolset, especially over the entire expected life of the fleet. Many times, acceptable performance can be demonstrated during brief evaluation period
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55aec1cd51f9aaf9d919e62dafa19930
https://doi.org/10.1117/12.814089
https://doi.org/10.1117/12.814089
Autor:
Colin J. Brodsky, Gerhard Lembach, Scott M. Mansfield, Andrew Brendler, Timothy J. Wiltshire, Bernhard R. Liegl, Wai-kin Li, Allen H. Gabor, Timothy A. Brunner, Shailendra Mishra, Vinayan C. Menon
Publikováno v:
Optical Microlithography XXI.
Depth of Focus (DOF) and exposure latitude requirements have long been ambiguous. Techniques range from scaling values from previous generations to summing individual components from the scanner. Even more ambiguous is what critical dimension (CD) va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::995ce8e57cee13af9035b3790ef9a65d
https://doi.org/10.1117/12.773070
https://doi.org/10.1117/12.773070
Autor:
Tom Faure, Bachir Dirahoui, Gary Berg, Arpan P. Mahorowala, Scott Halle, W. Yan, Asuka Nomura, Allen H. Gabor, William M. Chu, Alexandra Barberet, Andrew Brendler, Amr Abdo, Donald J. Samuels, Len Y. Tsou, Kaushal Patel, Faisal Azam, Seiji Iseda, Ishtiaq Ahsan, Jeffrey A. Zimmerman
Publikováno v:
SPIE Proceedings.
With the nominal gate length at the 65 nm node being only 35 nm, controlling the critical dimension (CD) in polysilicon to within a few nanometers is essential to achieve a competitive power-to-performance ratio. Gate linewidths must be controlled, n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0fb440094203312b62322c7b84637c1
https://doi.org/10.1117/12.659427
https://doi.org/10.1117/12.659427
Autor:
J. Poulin, James R. Lloyd, James J. Demarest, Bruce Redder, Ronald G. Filippi, Andrew Brendler, Ping-Chuan Wang
Publikováno v:
ECS Meeting Abstracts. :2066-2066
Electromigration is one of the main reliability concerns in integrated circuit (IC) technologies having copper (Cu) interconnects and low dielectric constant (low-k) materials. During electromigration, Cu atoms migrate in the direction of the electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::112ccaf8738a8daea56f4fbbd9e6d651
https://doi.org/10.1149/ma2008-02/28/2066
https://doi.org/10.1149/ma2008-02/28/2066