Zobrazeno 1 - 10
of 213
pro vyhledávání: '"Andrew A. Allerman"'
Autor:
Andrew T. Binder, James A. Cooper, Jeffrey Steinfeldt, Andrew A. Allerman, Richard Floyd, Luke Yates, Robert J. Kaplar
Publikováno v:
e-Prime: Advances in Electrical Engineering, Electronics and Energy, Vol 5, Iss , Pp 100218- (2023)
This paper describes a process for forming a buried field shield in GaN by an etch-and-regrowth process, which is intended to protect the gate dielectric from high fields in the blocking state. GaN trench MOSFETs made at Sandia serve as the baseline
Externí odkaz:
https://doaj.org/article/b7c8e9011ad2440cbab5a3681ba9f291
Autor:
Andrew M. Armstrong, Andrew A. Allerman, Greg W. Pickrell, Mary H. Crawford, Caleb E. Glaser, Trevor Smith
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 318-323 (2021)
Etched-and-regrown GaN pn-diodes capable of high breakdown voltage (1610 V), low reverse current leakage (1 nA = 6 μA/cm2 at 1250 V), excellent forward characteristics (ideality factor 1.6), and low specific on-resistance (1.1 mΩ.cm2) were realized
Externí odkaz:
https://doaj.org/article/8ef17d39cb45411983348f962825013f
Autor:
Patrick H. Carey, Fan Ren, Albert G. Baca, Brianna A. Klein, Andrew A. Allerman, Andrew M. Armstrong, Erica A. Douglas, Robert J. Kaplar, Paul G. Kotula, Stephen J. Pearton
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 444-452 (2019)
AlGaN channel high electron mobility transistors (HEMTs) are the potential next step after GaN channel HEMTs, as the high aluminum content channel leads to an ultra-wide bandgap, higher breakdown field, and improved high temperature operation. Al0.85
Externí odkaz:
https://doaj.org/article/6d1b3698d9d3405d8da45f9aff91a965
Autor:
Michael E. Liao, William L. Olsen, Kenny Huynh, Dorian P. Luccioni, Yekan Wang, XianRong Huang, Michael J. Wojcik, Andrew A. Allerman, Mark S. Goorsky
Publikováno v:
Journal of Applied Physics. 133
Localized lattice distortions in GaN substrates can serve as nucleation sites for epitaxial macro-steps and macro-terraces. These detrimental macro-scale features give rise to optically hazy homoepitaxial GaN surfaces. After nucleating, these macro-f
Autor:
Luke Yates, Brendan P. Gunning, Mary H. Crawford, Jeffrey Steinfeldt, Michael L. Smith, Vincent M. Abate, Jeramy R. Dickerson, Andrew M. Armstrong, Andrew Binder, Andrew A. Allerman, Robert J. Kaplar
Publikováno v:
IEEE Transactions on Electron Devices. 69:1931-1937
Autor:
Jung Han, Kai Fu, Andrew M. Armstrong, Hong Chen, Chen Yang, Andrew A. Allerman, Hanxiao Liu, Xuguang Deng, Shanthan Reddy Alugubelli, Tae Hyeon Kim, Houqiang Fu, Fernando Ponce, Prudhvi Peri, David J. Smith, Edward T. Yu, Po Yi Su, Daniel C. Messina, Jingan Zhou, Chi-Yin Cheng, Xuanqi Huang, Robert J. Nemanich, Stephen M. Goodnick, Dinusha Herath Mudiyanselage, Kevin Hatch, Yuji Zhao, Tsung-Han Yang, Bingjun Li, Reza Vatan Meidanshahi
Publikováno v:
Materials Today. 49:296-323
This paper reviews materials challenges and recent progress for selective area regrowth and doping for vertical gallium nitride (GaN) power devices. The purpose is to realize randomly placed, reliable, contactable, and generally useable laterally pat
Autor:
Andrew M. Armstrong, Andrew A. Allerman, Sanyam Bajaj, David R. Daughton, Siddharth Rajan, Shahadat H. Sohel, Alexander M. Potts, Towhidur Razzak
Publikováno v:
IEEE Transactions on Electron Devices. 68:4278-4282
Ultrawide bandgap Al0.7Ga0.3N MESFETs with refractory Tungsten Schottky and Ohmic contacts are studied in 300–675 K environments. Variable-temperature dc electrical transport reveals large ON-state drain current densities for an AlGaN device: 209 m
Autor:
Mary H. Crawford, A. Alec Talin, Andrew A. Allerman, François Léonard, Andrew M. Armstrong, Greg Pickrell, K. C. Celio
Publikováno v:
IEEE Electron Device Letters. 42:1041-1044
Advanced GaN power devices are promising for many applications in high power electronics but performance limitations due to material quality in etched-and-regrown junctions prevent their widespread use. Carrier diffusion length is a critical paramete
Publikováno v:
ECS Transactions. 98:15-20
The structural evolution before and after annealing of c-plane dot-core GaN substrates under growth-like conditions was studied using monochromatic X-ray topography. The anneal was performed at 1050 °C for 10 hours in a MOCVD growth chamber under co
Autor:
Eric R. Heller, Asegun Henry, Andrew A. Allerman, Alexej Pogrebnyakov, Venkatraman Gopalan, Disha Talreja, Yiwen Song, Daniel Shoemaker, Hamid Reza Seyf, Joan M. Redwing, Sukwon Choi, Bikramjit Chatterjee, James Spencer Lundh, Robert Kaplar, Christopher B. Saltonstall, Albert G. Baca, Thomas E. Beechem, Andrew M. Armstrong, Brian M. Foley, Brianna Klein, Anushka Bansal
Publikováno v:
IEEE Electron Device Letters. 41:461-464
Aluminum gallium nitride (AlGaN) high electron mobility transistors (HEMTs) are candidates for next-generation power conversion and radio frequency (RF) applications. AlxGa1-xN channel HEMT devices (x = 0.3, x = 0.7) were investigated using multiple