Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Andrew, H. Simon"'
Publikováno v:
Springer Handbook of Semiconductor Devices ISBN: 9783030798260
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32478d9fb5d00cd76635cee948ed0112
https://doi.org/10.1007/978-3-030-79827-7_5
https://doi.org/10.1007/978-3-030-79827-7_5
Autor:
Robert L. Bruce, Jin-Ping Han, I. Ok, Abu Sebastian, Geoffrey W. Burr, John M. Papalia, Hsinyu Tsai, Vijay Narayanan, Lynne Gignac, Katie Spoon, Tenko Yamashita, Nicole Saulnier, S. R. Nandakumar, Cheng-Wei Cheng, Andrew H. Simon, Benedikt Kersting, Charles Mackin, Irem Boybat, Stefano Ambrogio, Kevin W. Brew, Matthew J. BrightSky, Ning Li, M. Le Gallo, Praneet Adusumilli, Saraf Iqbal Rashid, Timothy M. Philip, Wanki Kim, Zuoguang Liu, Thomas Bohnstingl, S. Ghazi Sarwat, Nanbo Gong
Publikováno v:
IRPS
Phase change memory (PCM) is rapidly emerging as a promising candidate for building non-von Neumann accelerators for deep neural networks (DNN) based on in-memory computing. However, conductance drift and noise are key challenges for the reliable sto
Autor:
Juntao Li, Yasir Sulehria, Nicholas A. Lanzillo, Devika Sil, Joe Lee, James J. Kelly, Raghuveer R. Patlolla, Hosadurga Shobha, Anuja DeSilva, Prasad Bhosale, Takeshi Nogami, Oleg Gluschenkov, Lawrence A. Clevenger, Son Nguyen, Jennifer Church, Huai Huang, Balasubramanian S. Haran, Yann Mignot, James J. Demarest, Andrew H. Simon, Brown Peethala Dan Edelstein
Publikováno v:
2020 IEEE International Interconnect Technology Conference (IITC).
Feasibility of single damascene Cu BEOL nanowires with TaN/Ta barrier (i.e. omitting a CVD-Co liner) was studied. Successful Cu gap-fill in 36 nm pitch trenches demonstrated 30% line resistance (Line-R) reduction vs. leading-edge Cu with conventional
Autor:
Kenneth P. Lloyd, Ogooluwa A. Ojelabi, Anthony Carruthers, Andrew H. Simon, Julie K. De Zutter
Publikováno v:
The Journal of Membrane Biology. 251:131-152
A growing body of evidence demonstrates that GLUT1-mediated erythrocyte sugar transport is more complex than widely assumed and that contemporary interpretations of emergent GLUT1 structural data are incompatible with the available transport and bioc
Autor:
Takeshi Nogami, Chih-Chao Yang, Oscar van der Straten, Nicholas A. Lanzillo, Andrew H. Simon, Daniel C. Edelstein
Publikováno v:
Journal of Vacuum Science & Technology A. 38:053402
The transition in manufacturing from Al(Cu)/W to Cu multilevel on-chip line/via ULSI wiring for high-performance CMOS logic chips was initiated in late 1997 and has since become the exclusive industry-standard. The authors provide a comprehensive rev
Autor:
Takashi Ando, Michael Belyansky, Elham R. Borujeny, Ken Cadien, Kenneth C. Cadien, Jin Cai, Loren A. Chow, Keith D. Coulson, Robert H. Dennard, Jeff Gambino, Dhruv Gelda, S.B. Herner, Arvind Kumar, Angus Macleod, Mengmeng Miao, Triratna Muneshwar, Lucy Nolan, Rajan K. Pandey, Manjunath C. Rajagopal, Dominic Schepis, Krishna Seshan, Shahab Siddiqui, Andrew H. Simon, Sanjiv Sinha, Krishna V. Valavala
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4a49246546cd6b7c175567499fdd1b4
https://doi.org/10.1016/b978-0-12-812311-9.00022-0
https://doi.org/10.1016/b978-0-12-812311-9.00022-0
Autor:
Felipe Tijiwa-Birk, Brian A. Cohen, Shishir Ray, K. K. Kohli, Siddarth A. Krishnan, Joyeeta Nag, C. Parks, Andrew H. Simon
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 28:469-473
Alloy seedlayers for copper back-end of line interconnects have become common at technology groundrules of 45 nm and below, due to reliability requirements. The key requirement of the minority alloy component (e.g., Al or manganese, also referred to
Autor:
Samuel Choi, Minseok Oh, Yan Yan, Anita Madan, Brian A. Cohen, Siddarth A. Krishnan, Andrew H. Simon, Joyeeta Nag, Atsushi Ogino, Baozhen Li, Cathryn Christiansen, Patrick W. DeHaven, Andrew Kim, Jim Shih-Chun Liang
Publikováno v:
ECS Transactions. 69:161-169
We report on an alternative, atomic layer deposited (ALD) TaN barrier scheme for Cu interconnects for 14nm technology node and beyond, i.e., 64nm pitch and/or smaller interconnects. With VLSI integration requiring denser packing of interconnects, con
Autor:
Kenneth P. Lloyd, Anthony Carruthers, Ogooluwa A. Ojelabi, Julie K. De Zutter, Andrew H. Simon
Publikováno v:
The Journal of biological chemistry. 291(52)
WZB117 (2-fluoro-6-(m-hydroxybenzoyloxy) phenyl m-hydroxybenzoate) inhibits passive sugar transport in human erythrocytes and cancer cell lines and, by limiting glycolysis, inhibits tumor growth in mice. This study explores how WZB117 inhibits the er
Publikováno v:
ECS Transactions. 3:139-146
Electromigration in 70 nm wide Cu interconnections has been investigated for the sample temperatures from 213oC to 300oC. The effect of atomic layer or physical vapor deposited TaNx and physical vapor deposited Ta liner layers in Cu Damascene lines o