Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Andres Perez-Celis"'
Publikováno v:
IEEE Transactions on Nuclear Science. 68:2480-2487
Field-programmable gate arrays (FPGAs) are susceptible to radiation-induced effects that can affect more than one memory cell. Radiation-induced microsingle event functional interrupts (micro-SEFIs) are one of such events that can upset several bits
Publikováno v:
IEEE Transactions on Nuclear Science. 68:1594-1599
Radiation-induced multiple-cell upsets (MCUs) are events that account for more than 50% of failures on triple modular redundancy (TMR) designs in SRAM field programmable gate array (FPGA). It is important to understand these events and their impact o
Publikováno v:
IEEE Transactions on Nuclear Science. 67:312-320
Triple modular redundancy (TMR) with repair is a commonly employed mitigation strategy used on SRAM field-programmable gate arrays (FPGAs) to reduce the effects of ionizing radiation and improve a circuit’s sensitive cross section. This article exa
Autor:
Michael Wirthlin, Andres Perez-Celis
Publikováno v:
IEEE Transactions on Nuclear Science. 67:50-56
Radiation-induced multiple-cell upsets (MCUs) are a concern because they can overcome the protection of error correction code and triplicated designs. Extracting MCU data from radiation tests is helpful to perform more accurate fault injection tests,
Autor:
Andrew M. Keller, Corbin Thurlow, Michael Wirthlin, Hayden C. Rowberry, Andres Perez-Celis, Matthew Cannon
Publikováno v:
IEEE Transactions on Nuclear Science. 66:207-215
Triple modular redundancy (TMR) with repair has proven to be an effective strategy for mitigating the effects of single-event upsets within the configuration memory of static random access memory field-programmable gate arrays. Applying TMR to the de
Publikováno v:
2020 Annual Reliability and Maintainability Symposium (RAMS).
Triple modular redundancy (TMR) is commonly employed to increase the reliability and mean time to failure (MTTF) of a system. This improvement can be shown by using a continuous time Markov chain. However, typical Markov chain models do not model com
Autor:
Jordan L. Anderson, Matthew Cannon, Michael Wirthlin, Andres Perez-Celis, William Rice, David S. Lee, Michael King, William Evans
Publikováno v:
2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018).
This study examines the single-event response of Xilinx 16nm FinFET UltraScale+ FPGA and MPSoC device families. Heavy-ion single-event latch-up, single-event upsets in configuration SRAM, BlockRAM™ memories, and flip-flops, and neutron-induced sing
Autor:
Andres Perez-Celis, Asa Angeles, Sebastian E. Garcia, Gary Swift, William J. Rowe, Robert Liu, Krysten H. Pfau, Kyle P. Robinson, Kevin W. Wray, Michael Wirthlin, Jonathan Holden, Stephen E. Stone, Barry L. Willits
Publikováno v:
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Recent proton and heavy ion SEE data are presented for selected Virtex-7 architectural features requiring dynamic in-beam testing: I/O blocks in various modes, IOSERDES, digital- and phase-locked loop clocks, and block memory’s error correction cir
Publikováno v:
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Small spot size laser testing for single-event effects has proven to be a particularly productive path to insights on the physics of charge collection and circuit response that are difficult or impossible to obtain through broad ion beam tests. As a
Autor:
JUAN ANDRES PEREZ CELIS
Publikováno v:
Instituto Nacional de Astrofísica, Óptica y Electrónica
INAOE
Repositorio Institucional del INAOE
INAOE
Repositorio Institucional del INAOE
The use of Static Random-Access Memory (SRAM)-based Field Programmable Gate Arrays (FPGAs) in space systems is gaining a growing interest. The high-computational power, the ability to reconfigure and the flexibility of FPGAs at low power make them su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3056::f1a29578794b84369e49fbeba5ffccd0
http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/836
http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/836