Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Andrej Vrbicky"'
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 3, Iss 2, Pp 265-268 (2004)
High quality silicon epitaxial layers are inevitable in bipolar and/or unipolar technology. However, its properties are not as easy characterized as those of bulk material. The recombination lifetime is dominated by surface/interface recombination fo
Externí odkaz:
https://doaj.org/article/358d28fe8862451bac6f68c3af4fdde7
