Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Andrej Vrbicky"'
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 3, Iss 2, Pp 265-268 (2004)
High quality silicon epitaxial layers are inevitable in bipolar and/or unipolar technology. However, its properties are not as easy characterized as those of bulk material. The recombination lifetime is dominated by surface/interface recombination fo
Externí odkaz:
https://doaj.org/article/358d28fe8862451bac6f68c3af4fdde7
Publikováno v:
2012 28th Annual IEEE Semiconductor Thermal Measurement & Management Symposium (SEMI-THERM); 1/ 1/2012, p1-5, 5p
Autor:
Donoval, D., Vrbicky, A.
Publikováno v:
Fifth International Conference on Advanced Semiconductor Devices & Microsystems, 2004. ASDAM 2004 (9780780383357); 2004, p211-214, 4p
Among many great inventions made in the 20th century, electronic circuits, which later evolved into integrated circuits, are probably the biggest, when considering their contribution to human society. Entering the 21st century, the importance of inte
