Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Andrei Yu Gorbatchev"'
Autor:
Andrei Yu Gorbatchev, Claudia Verónica Silva Juárez, Victor Hugo Compeán Jasso, Francisco Javier De Anda Salazar, Juan Adrián Galván Montalvo, Viatcheslav Michournyi
Publikováno v:
MRS Advances. 5:3327-3335
In this work we have analysed the conditions to grow epitaxial layers by Liquid Phase Epitaxy (LPE) from ternary Ga-As-P liquid phases on GaAs and GaP under initial conditions that are far away of the thermodynamic equilibrium. First, it is shown tha
Autor:
Edith G. Castillo-Baldivia, R. E. Balderas-Navarro, Andrés de Luna-Bugallo, Francisco J. Rocha-Reina, Andrei Yu Gorbatchev, Osvaldo Del Pozo-Zamudio, Vyatcheslav A. Michournyi, E. A. Cerda-Méndez
Publikováno v:
physica status solidi (a). 217:2000164
Autor:
J. M. Flores-Camacho, Román López-Sandoval, Andrei Yu Gorbatchev, Israel A. Rosales-Gallegos, Isidro Cruz-Cruz, Marisol Reyes-Reyes
Publikováno v:
The Journal of Physical Chemistry C. 119:19305-19311
Dedoping of PEDOT:PSS by a simple and physical process has been performed by the addition of 1,8-diazabicyclo[5.4.0]undec-7-ene (DBU), a strong organic base, in the PEDOT:PSS aqueous dispersion. The DBU-treated PEDOT:PSS samples showed a strong absor
Autor:
Pallavi Patil, Christian Alejandro Mercado-Ornelas, E. Eugenio-López, I.E. Cortes-Mestizo, Andrei Yu Gorbatchev, L.I. Espinosa-Vega, Satoshi Shimomura, José Ángel Espinoza-Figueroa, Víctor Hugo Méndez-García
Publikováno v:
Japanese Journal of Applied Physics. 57:025201
The high order self-organization of quantum dots is demonstrated in the growth of InAs on a GaAs(631)-oriented crystallographic plane. The unidimensional ordering of the quantum dots (QDs) strongly depends on the As flux beam equivalent pressure (P A
Autor:
Román López-Sandoval, Andrei Yu Gorbatchev, J. M. Nápoles-Duarte, Marisol Reyes-Reyes, David L. Carroll
Publikováno v:
The Journal of Physical Chemistry C. 113:13677-13682
The solubilization and micellar encapsulation of fullerene derivative [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) have been investigated by the use of the amphiphilic block copolymer polystyrene-block-poly[ethylene oxide] (PS-b-PEO). Aqueous so
Autor:
V. A. Mishournyi, Carlos Soubervielle-Montalvo, Máximo López-López, I.C. Hernandez, S. Gallardo, V.H. Méndez-García, F. de Anda, Y. Kudriatsev, Andrei Yu Gorbatchev
Publikováno v:
Journal of Crystal Growth. 311:1650-1654
In this work the incorporation of oxygen in Al 0.2 Ga 0.3 In 0.5 P:Be layers lattice-matched to GaAs grown by solid source molecular beam epitaxy (SSMBE) was studied by secondary ion mass spectrometry (SIMS) and photoluminescence (PL) spectroscopy. B
Publikováno v:
Japanese Journal of Applied Physics. 42:L410-L413
We report the effects of the exposure of homoepitaxially grown GaAs buffer layers to high temperature with no As overpressure on the InAs growth front. It was observed that after using this thermal treatment the InAs bidimensional growth was preserve
Autor:
Andrei Yu Gorbatchev, Máximo López-López, J.V. González-Fernández, Alejandro Cisneros-de-la-Rosa, Víctor Hugo Méndez-García, Luis Zamora-Peredo, E. Cruz-Hernández, R. E. Balderas-Navarro, I.E. Cortes-Mestizo
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 32:02C110
The influence of near surface structure termination and surface treatments on the surface electric fields and mobility of modulation doped AlGaAs/GaAs heterostructures (MDH) were investigated. The built-in and surface electric fields were evaluated b
Publikováno v:
Journal of Physics: Conference Series. 274:012115
In this work we inform about quantum dots (QD) obtained by Liquid Phase Epitaxy (LPE) on GaAs substrates from under-saturated In-As liquid phases. In our processes, we have prepared saturated In-rich liquid phases by dissolving an InAs wafer at one o
Autor:
Eric Eugenio-López, Christian Alejandro Mercado-Ornelas, Pallavi Kisan Patil, Irving Eduardo Cortes-Mestizo, José Ángel Espinoza-Figueroa, Andrei Yu Gorbatchev, Satoshi Shimomura, Leticia Ithsmel Espinosa-Vega, Víctor Hugo Méndez-García
Publikováno v:
Japanese Journal of Applied Physics; Feb2018, Vol. 57 Issue 2, p1-1, 1p