Zobrazeno 1 - 10
of 450
pro vyhledávání: '"Andrei Vladimirescu"'
Autor:
Tatiana Moposita, Esteban Garzon, Raffaele De Rose, Felice Crupi, Andrei Vladimirescu, Lionel Trojman, Marco Lanuzza
Publikováno v:
IEEE Access, Vol 11, Pp 144084-144094 (2023)
This paper introduces SIMPLY+, an advanced Spin-Transfer Torque Magnetic Random-Access Memory (STT-MRAM)-based Logic-in-Memory (LIM) architecture that evolves from the previously proposed smart material implication (SIMPLY) logic scheme. More specifi
Externí odkaz:
https://doaj.org/article/94ffd83b15f74bd8beba5a338436c4f8
Autor:
Jens Anders, Masoud Babaie, Joseph C. Bardin, Imran Bashir, Gerard Billiot, Elena Blokhina, Shai Bonen, Edoardo Charbon, John Chiaverini, Isaac L. Chuang, Carsten Degenhardt, Dirk Englund, Lotte Geck, Loick Le Guevel, Donhee Ham, Ruonan Han, Mohamed I. Ibrahim, Daniel Kruger, Ka Meng Lei, Adrien Morel, Dennis Nielinger, Gael Pillonnet, Jeremy M. Sage, Fabio Sebastiano, Robert Bogdan Staszewski, Jules Stuart, Andrei Vladimirescu, Patrick Vliex, Sorin P. Voinigescu
Publikováno v:
IEEE Transactions on Quantum Engineering, Vol 4, Pp 1-30 (2023)
Over the past decade, significant progress in quantum technologies has been made, and hence, engineering of these systems has become an important research area. Many researchers have become interested in studying ways in which classical integrated ci
Externí odkaz:
https://doaj.org/article/bf230e47a01b4f4ba14222f6bef578f9
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 263-273 (2020)
This paper presents a device matching study of a commercial 40-nm bulk CMOS technology operated at cryogenic temperatures. Transistor pairs and linear arrays, optimized for device matching, were characterized over the temperature range from 300 K dow
Externí odkaz:
https://doaj.org/article/f7fe6401fa6e4cb9afd6d11fcc7c461d
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 797-806 (2020)
Cryogenic device models are essential for the reliable design of the cryo-CMOS electronic interface necessary to build future large-scale quantum computers. This paper reports the characterization of the drain-current mismatch of NMOS and PMOS device
Externí odkaz:
https://doaj.org/article/cb17554bb9b949e8aadc128e670d6960
Autor:
Tatiana Moposita, Esteban Garzón, Felice Crupi, Lionel Trojman, Andrei Vladimirescu, Marco Lanuzza
Publikováno v:
IEEE Transactions on Circuits and Systems Part 2: Express Briefs, 70(3)
This brief deals with the impact of spin-transfer torque magnetic random access memory (STT-MRAM) cell based on double-barrier magnetic tunnel junction (DMTJ) on the performance of a two-layer multilayer perceptron (MLP) neural network. The DMTJ-base
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6a7b6c400a2f863ec26906007502d22a
https://doi.org/10.1109/tcsii.2023.3240474
https://doi.org/10.1109/tcsii.2023.3240474
Publikováno v:
IEEE Nanotechnology Magazine. 17:31-40
As big strides were being made in many science fields in the 1970s and 80s, faster computation for solving problems in molecular biology, semiconductor technology, aeronautics, particle physics, etc., was at the forefront of research. Parallel and su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::510fbaaa088f89570e2479b7efc9b61d
https://doi.org/10.1109/mnano.2022.3228097
https://doi.org/10.1109/mnano.2022.3228097
Autor:
Rosario M. Incandela, Lin Song, Harald Homulle, Edoardo Charbon, Andrei Vladimirescu, Fabio Sebastiano
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 996-1006 (2018)
Cryogenic characterization and modeling of two nanometer bulk CMOS technologies (0.16-μm and 40-nm) are presented in this paper. Several devices from both technologies were extensively characterized at temperatures of 4 K and below. Based on a detai
Externí odkaz:
https://doaj.org/article/d6ca260b287041aab53f0bf01405ca49
Autor:
Andrei Vladimirescu, Jian Song, JINTAO WANG, Xiaodong Liu, Xuanbang CHEN, Ziqi LIU, xun zhang, Dayu Shi
This paper presents a joint illumination and communication model for Gallium Nitride (GaN) Multiple Quantum Well (MQW) Light Emitting Diodes (LEDs) used in Visible Light Communication (VLC) systems. Based on device physics, the proposed model charact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::35f086f5ae3e23930b5f6c6d2ed2b34d
https://doi.org/10.1364/opticaopen.23148848.v1
https://doi.org/10.1364/opticaopen.23148848.v1
Autor:
Dayu Shi, Xun Zhang, Lina Shi, Andrei Vladimirescu, Wojciech Mazurczyk, Krzysztof Cabaj, Benjamin Meunier, Kareem Ali, John Cosmas, Yue Zhang
Publikováno v:
Sensors, Vol 21, Iss 4, p 1515 (2021)
In this paper, a novel device identification method is proposed to improve the security of Visible Light Communication (VLC) in 5G networks. This method extracts the fingerprints of Light-Emitting Diodes (LEDs) to identify the devices accessing the 5
Externí odkaz:
https://doaj.org/article/30bc59cf616f4a92936ecca2ab53b8a1
Publikováno v:
2023 IEEE 14th Latin America Symposium on Circuits and Systems (LASCAS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ed6d8b7f233e73dffcd4427c8110961
https://doi.org/10.1109/lascas56464.2023.10108276
https://doi.org/10.1109/lascas56464.2023.10108276