Výsledky vyhledávání - "Andrei V. Tupkalo"

Conductive CaSi2 transparent in the near infra-red range

Autor: Andrey B. Filonov, E. A. Chusovitin, Vlodislav O. Bogorodz, D. L. Goroshko, Béla Pécz, Konstantin N. Galkin, Ildikó Cora, A. M. Maslov, Andrei V. Tupkalo, Sergey A. Dotsenko, Victor E. Borisenko, Nikolay G. Galkin, Evgenii Y. Subbotin, Dmitrii B. Migas

Publikováno v: Journal of Alloys and Compounds. 770:710-720

The methods of heteroepitaxial growth of Si/CaSi2/Si(111) double heterostructures (DHS) at 500 °C have been developed. Thin CaSi2 layers with the thicknesses of 14–40 nm have been successfully embedded in the silicon matrix. The hR6-CaSi2(001)||Si

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6dfe414141aceb9ebf830b10eece8b45
https://doi.org/10.1016/j.jallcom.2018.08.179

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Semitransparent and conductive CaSi2 films for silicon device applications

Autor: Konstantin N. Galkin, Z. Fogarassi, Béla Pécz, E. A. Chusovitin, D. L. Goroshko, Andrei V. Tupkalo, Nikolay G. Galkin

Publikováno v: Japanese Journal of Applied Physics. 59:SFFA12

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::86975a4c8801f7d9c667493d68c2654d
https://doi.org/10.35848/1347-4065/ab6b75

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A low temperature growth of Ca silicides on Si(100) and Si(111) substrates: Formation, structure, optical properties and energy band structure parameters

Autor: Nikolay G. Galkin, Béla Pécz, Konstantin N. Galkin, Zsolt Fogarassy, Andrei V. Tupkalo

Publikováno v: Journal of Alloys and Compounds. 813:152101

The low-temperature formation of Ca silicides on silicon substrates with (100) and (111) orientations and on the oxidized silicon surface during deposition using solid phase epitaxy (SPE) and molecular beam epitaxy (MBE) was studied by the in situ el

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6ac71d82525644b2cf9c03668a67d2f5
https://doi.org/10.1016/j.jallcom.2019.152101

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Ca Silicide Films on Si(1 0 0) and Si(1 1 1) Substrates: Structure, Optical and Electrical Properties

Autor: Béla Pécz, Nikolay G. Galkin, Konstantin N. Galkin, S. A. Dotsenko, Z. Fogarassi, Andrei V. Tupkalo

Publikováno v: International Journal of Nanoscience. 18:1940014

The crystal structure, optical and electrical properties of Ca silicide films grown by MBE and RDE processes on Si(1 0 0) and Si(1 1 1) substrates have been compared. Optical spectroscopy studies, including Raman spectroscopy, have shown two silicide

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dc4f4668b8fc423bd18b4615e2436fdd
https://doi.org/10.1142/s0219581x19400143

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