Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Andrei V. Gorbunov"'
Autor:
Stanislav A. Matveev, Evgeny B. Korotkov, Yuri A. Zhukov, Nikita S. Slobodzian, Mikhail I. Nadezhin, Andrei V. Gorbunov, Leonid T. Tanklevskiy
Publikováno v:
International Journal of Mathematical, Engineering and Management Sciences, Vol 5, Iss 1, Pp 181-192 (2020)
Modern diagnostics methods ensuring the safety of production and operation, as well as the improvement of functional characteristics of electromechanical systems’ are discussed, method of diagnostics according to the spectrum and hodograph of the e
Externí odkaz:
https://doaj.org/article/f2f631b0ef69408dadf927d655283992
Autor:
Alexander Shirshov, Yuri Konoplev, Stanislav A. Matveev, Nikolai Yakovenko, Nikolay Didenko, Andrei V. Gorbunov
Publikováno v:
International Journal of Mathematical, Engineering and Management Sciences, Vol 5, Iss 2, Pp 319-327 (2020)
In the work problems related to control of precision piezoelectric actuator devices, piezo actuators in particular, are discussed. Multichannel system of control of piezo actuators is presented. Possibility of using the said control system to control
Autor:
C. Otani, Aleandro R. Marquesi, Gilberto Petraconi Filho, Andrei V. Gorbunov, Renata Mourao, Anton A. Halinouski
Publikováno v:
IEEE Transactions on Plasma Science. 43:3760-3767
Thermochemical assessment of the gasification of the biomass waste composed of sugarcane bagasse aiming for practical applications of an electric arc or radio frequency plasma reactors for the syngas production was carried out, considering different
Autor:
Alexandr F. Bublievsky, G. E. Testoni, Anton A. Halinouski, Homero Santiago Maciel, P. T. Lacava, Gilberto Petraconi Filho, Dmitry A. Bublievsky, J.C. Sagás, Andrei V. Gorbunov
Publikováno v:
IEEE Transactions on Plasma Science. 43:1742-1746
Gliding arc discharges have been utilized in plasma-assisted combustion processes, among various other applications, due to their chemical properties. In this paper, an ac-powered gliding arc discharge having a reverse vortex flow configuration (torn
Autor:
O. V. Mucha, H. A. Viarshyna, P. T. Lacava, V. Y. Baranov, A. Matus, O. S. Nozhenko, Andrei V. Gorbunov, A. Pilatau, R. Maurao, I. Liapeshko, G. Petraconi Filho, H. S. Maciel
Publikováno v:
Journal of the Brazilian Society of Mechanical Sciences and Engineering. 36:673-679
This paper presents the analysis of ecological and economical availability for using syngas from gasification of biomass waste or other solid fuels into diesel with ICE-based combined cycle (CC). The new approach is proposed to improve the ecological
Autor:
Gilberto Petraconi Filho, C. Otani, Dmitry A. Bublievsky, Aleandro R. Marquesi, Homero Santiago Maciel, Alexandr F. Bublievsky, Andrei V. Gorbunov
Publikováno v:
IEEE Transactions on Plasma Science. 41:3287-3292
In this paper, the anisotropic model for the dc electric arc was expanded, which allows the obtaining of power function generalized expressions for calculating the characteristics of the electric discharge into the dc plasma torch channel without usi
Autor:
G. Petraconi Filho, Alexandr F. Bublievsky, M. A. de Souza, Homero Santiago Maciel, F.S. Miranda, Anton A. Halinouski, Rodrigo Sávio Pessoa, Andrei V. Gorbunov, A. R. Marquesi
Publikováno v:
Proceeding of Second Thermal and Fluids Engineering Conference.
Publikováno v:
2010 11th International Conference and Seminar on Micro/Nanotechnologies and Electron Devices.
We study photoluminescence (PL) from dislocation-rich Si layers prepared by Si growth on the nanostructured surface composed of dense arrays of Ge islands grown on the oxidized Si surface. The Si layers exhibit intense PL centered in the 1.5–1.6 wa
Publikováno v:
2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies.
We study the influence of the technological parameters on photoluminescence properties of Ge quantum dots in a Si matrix. We found growth and annealing conditions which provide the formation of Ge quantum dots with two energy levels.
Autor:
Valeriy G. Kesler, Andrei V. Gorbunov
Publikováno v:
2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices.
This work is devoted to the development of method for determination of life time and surface recombination rate in epitaxial layers of indium arsenide. The determination of relaxation parameters is based on modeling of nonequilibrium charge carriers