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Publikováno v:
Key Engineering Materials. 947:83-88
This work aims to optimize Plasma-Enhanced Chemical Vapour Deposition (PECVD) amorphous hydrogenated silicon carbide (a-SiC:H) as a conformal passivation layer for invasive microelectrode array (MEA) neural interface applications. By carefully tuning
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bca61af89bef5d595e8b241e04aa061e
https://doi.org/10.4028/p-762f40
https://doi.org/10.4028/p-762f40
