Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Andrei Pashkovich"'
Publikováno v:
IEEE Access, Vol 9, Pp 159334-159348 (2021)
This article presents formulations for the voltage-in-current (VinC) latency insertion method (LIM) for thin-film transistors (TFTs). LIM is a fast circuit simulation algorithm that solves circuits in a leapfrog manner, without requiring intensive ma
Externí odkaz:
https://doaj.org/article/a085e62048c6420082e65ed816b96433
Publikováno v:
IEEE Transactions on Electron Devices. 68:3384-3389
This article presents a compact model for the drain current and capacitances of hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs). The model is valid in the deep and tail states regions of operations, with a smooth transition betwe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c7ec62d435fb64ea04dc1a5b1fd65f9
https://doi.org/10.1109/ted.2021.3082111
https://doi.org/10.1109/ted.2021.3082111
Publikováno v:
IEEE Access, Vol 9, Pp 159334-159348 (2021)
This article presents formulations for the voltage-in-current (VinC) latency insertion method (LIM) for thin-film transistors (TFTs). LIM is a fast circuit simulation algorithm that solves circuits in a leapfrog manner, without requiring intensive ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::317c7bc96a30abb270a5f0bbd07bd74d
https://ieeexplore.ieee.org/document/9631234/
https://ieeexplore.ieee.org/document/9631234/
Autor:
Patrick Goh, Wei Chun Chin, Andrei Pashkovich, Jose E. Schutt-Aine, Kostas Malinauskas, Nur Syazreen Ahmad, Haidi Ibrahim
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 10:1708-1720
This article presents the improved formulations for the latency insertion method (LIM) for diodes and MOSFETs utilizing the voltage-in-current framework. LIM is a fast circuit simulation algorithm, which computes the solutions to the voltages and cur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a43681c534ebec4b1cac45ca2fa5aa3
https://doi.org/10.1109/tcpmt.2020.3021413
https://doi.org/10.1109/tcpmt.2020.3021413