Zobrazeno 1 - 10
of 84
pro vyhledávání: '"Andrei, Zenkevich"'
Autor:
Anastasia Chouprik, Ekaterina Savelyeva, Evgeny Korostylev, Ekaterina Kondratyuk, Sergey Zarubin, Nikita Sizykh, Maksim Zhuk, Andrei Zenkevich, Andrey M. Markeev, Oleg Kondratev, Sergey Yakunin
Publikováno v:
Nanomaterials, Vol 13, Iss 23, p 3063 (2023)
The nanosecond speed of information writing and reading is recognized as one of the main advantages of next-generation non-volatile ferroelectric memory based on hafnium oxide thin films. However, the kinetics of polarization switching in this materi
Externí odkaz:
https://doaj.org/article/19172b548ccb4a03a182b931a73bbf48
Autor:
Maksim Zhuk, Sergei Zarubin, Igor Karateev, Yury Matveyev, Evgeny Gornev, Gennady Krasnikov, Dmitiry Negrov, Andrei Zenkevich
Publikováno v:
Frontiers in Neuroscience, Vol 14 (2020)
The development of highly integrated electrophysiological devices working in direct contact with living neuron tissue opens new exciting prospects in the fields of neurophysiology and medicine, but imposes tight requirements on the power dissipated b
Externí odkaz:
https://doaj.org/article/30eaa51caa354314b7060fb9e9e562e9
Publikováno v:
Nanoscale. 13:11635-11678
The discovery of ferroelectricity in polycrystalline thin films of doped HfO2 has reignited the expectations of developing competitive ferroelectric non-volatile memory devices. To date, it is widely accepted that the performance of HfO2-based ferroe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f16ff730429d17a01e201fa65e352670
https://doi.org/10.1039/d1nr01260f
https://doi.org/10.1039/d1nr01260f
Autor:
Anna, Dmitriyeva, Vitalii, Mikheev, Sergei, Zarubin, Anastasia, Chouprik, Giovanni, Vinai, Vincent, Polewczyk, Piero, Torelli, Yury, Matveyev, Christoph, Schlueter, Igor, Karateev, Qiong, Yang, Zhaojin, Chen, Lingling, Tao, Evgeny Y, Tsymbal, Andrei, Zenkevich
Publikováno v:
ACS nano. 15(9)
Composite multiferroics containing ferroelectric and ferromagnetic components often have much larger magnetoelectric coupling compared to their single-phase counterparts. Doped or alloyed HfO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::cd798cca78528e83779424723f04099b
https://pubmed.ncbi.nlm.nih.gov/34468129
https://pubmed.ncbi.nlm.nih.gov/34468129
Autor:
Dmitrii Negrov, Ekaterina Kondratyuk, Andrei Zenkevich, Anastasia Chouprik, Andrey M. Markeev, Vitalii Mikheev, Yury Lebedinskii, Maxim G. Kozodaev, Yury Matveyev, Sergei Zarubin
Publikováno v:
ACS Applied Materials & Interfaces. 11:32108-32114
While the conductance of a first-order memristor is defined entirely by the external stimuli, in the second-order memristor it is governed by the both the external stimuli and its instant internal state. As a result, the dynamics of such devices allo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dbe67eab537192b5c33249937257638f
https://doi.org/10.1021/acsami.9b08189
https://doi.org/10.1021/acsami.9b08189
Autor:
Andrei Gloskovskii, Vitalii Mikheev, Andrei Zenkevich, Abinash Kumar, James M. LeBeau, Everett D. Grimley, D. V. Negrov, Sergei Zarubin, Evgeny Y. Tsymbal, Yury Matveyev
Publikováno v:
Nanoscale. 11:19814-19822
The emergence of ferroelectricity in nanometer-thick films of doped hafnium oxide (HfO2) makes this material a promising candidate for use in Si-compatible non-volatile memory devices. The switchable polarization of ferroelectric HfO2 controls functi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cee0eb13e6d82d1d3dfd7fd94b4033e
https://doi.org/10.1039/c9nr05904k
https://doi.org/10.1039/c9nr05904k
Autor:
Igor A. Karateev, Gennady Krasnikov, Dmitiry Negrov, Yury Matveyev, Maksim Zhuk, Andrei Zenkevich, Sergei Zarubin, E. S. Gornev
Publikováno v:
Frontiers in Neuroscience
Frontiers in Neuroscience, Vol 14 (2020)
Frontiers in neuroscience 14, 94 (2020). doi:10.3389/fnins.2020.00094
Frontiers in Neuroscience, Vol 14 (2020)
Frontiers in neuroscience 14, 94 (2020). doi:10.3389/fnins.2020.00094
Frontiers in neuroscience 14, 94 (2020). doi:10.3389/fnins.2020.00094
The development of highly integrated electrophysiological devices working in directcontact with living neuron tissue opens new exciting prospects in the fields ofneurophysiolo
The development of highly integrated electrophysiological devices working in directcontact with living neuron tissue opens new exciting prospects in the fields ofneurophysiolo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::934d9424f67d8c8c6d719a93cf345eab
http://europepmc.org/articles/PMC7055297
http://europepmc.org/articles/PMC7055297
Autor:
Anton Khanas, Roberto Mantovan, Claudia Wiemer, Raimondo Cecchini, Andrei Zenkevich, Marco Fanciulli, Emanuele Longo, Christian Rinaldi, Alessio Lamperti, Matteo Cantoni, Massimo Longo
When coupled with ferromagnetic (FM) layers, topological insulators (TI) are expected to boost the charge-to-spin conversion efficiency across the FM/TI interface. In this context, a thorough control and optimization of the FM/TI interface quality ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::002fb935bcbcece551a39a54265c8404
http://hdl.handle.net/10281/282710
http://hdl.handle.net/10281/282710
Autor:
Sergei Zarubin, Dmitrii Negrov, Sergey Zakharchenko, Andrei Zenkevich, A. G. Chernikova, Roman V. Kirtaev, Anastasia Chouprik, Pratyush Buragohain, Alexei Gruverman, Maxim Spiridonov
Publikováno v:
ACS Applied Materials & Interfaces. 10:8818-8826
Because of their full compatibility with the modern Si-based technology, the HfO2-based ferroelectric films have recently emerged as viable candidates for application in nonvolatile memory devices. However, despite significant efforts, the mechanism
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0987e851dc93827527e3d9b93c1b6660
https://doi.org/10.1021/acsami.7b17482
https://doi.org/10.1021/acsami.7b17482
Autor:
Anastasia Chouprik, Vitalii Mikheev, A. M. Markeev, Andrei Zenkevich, A. G. Chernikova, Maxim Spiridonov, D. V. Negrov, Sergei Zarubin
Publikováno v:
Microelectronic Engineering. 178:250-253
In this work, we report on the electron transport properties of ultrathin (~2.5nm) ferroelectric polycrystalline Hf0.5Zr0.5O2 (HZO) films grown by the Atomic Layer Deposition (ALD) technique directly on the highly doped Si substrate. On the devices w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03fdd7789eb3fa200859f76fe8980920
https://doi.org/10.1016/j.mee.2017.05.028
https://doi.org/10.1016/j.mee.2017.05.028