Zobrazeno 1 - 10
of 198
pro vyhledávání: '"Andrei, Vescan"'
Autor:
Josef Schätz, Navin Nayi, Jonas Weber, Christoph Metzke, Sebastian Lukas, Jürgen Walter, Tim Schaffus, Fabian Streb, Eros Reato, Agata Piacentini, Annika Grundmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Stephan Pindl, Max C. Lemme
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-11 (2024)
Abstract Two-dimensional (2D) materials are considered for numerous applications in microelectronics, although several challenges remain when integrating them into functional devices. Weak adhesion is one of them, caused by their chemical inertness.
Externí odkaz:
https://doaj.org/article/ccfd73e65b764bda95fe7aa712a8d742
Autor:
Nico Rademacher, Eros Reato, Lukas Völkel, Annika Grundmann, Michael Heuken, Holger Kalisch, Andrei Vescan, Alwin Daus, Max C. Lemme
Publikováno v:
Micro and Nano Engineering, Vol 23, Iss , Pp 100256- (2024)
This study investigates the interactions between chemical vapor-deposited graphene and metal-organic chemical vapor-deposited molybdenum disulfide (MoS2) in heterostructures assembled via wet transfer. We use Raman spectroscopy to quantitatively dete
Externí odkaz:
https://doaj.org/article/94325540b28c4b1ba74f4961aa8daed4
Autor:
Amir Ghiami, Annika Grundmann, Songyao Tang, Hleb Fiadziushkin, Zhaodong Wang, Stephan Aussen, Susanne Hoffmann-Eifert, Michael Heuken, Holger Kalisch, Andrei Vescan
Publikováno v:
Surfaces, Vol 6, Iss 4, Pp 351-363 (2023)
Metal–organic chemical vapor deposition (MOCVD) is a key method for scalable synthesis of two-dimensional transition metal dichalcogenide (2D-TMDC) layers. However, it faces several challenges, such as the unintentional co-deposition of carbon impu
Externí odkaz:
https://doaj.org/article/7983c6e8ec224c53a0c89c49b191aa3f
Autor:
Carsten Beckmann, Zineng Yang, Jens Wieben, Thorsten Zweipfennig, Jasmin Ehrler, Arno Kirchbrucher, Holger Kalisch, Andrei Vescan
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 248-255 (2023)
We report on p-channel metal-insulator-semiconductor heterostructure field-effect transistors (MISHFET) based on p-GaN/uid-GaN/Al textsubscript 0.29Ga textsubscript 0.71N single heterostructures on sapphire substrates, grown by metalorganic vapor pha
Externí odkaz:
https://doaj.org/article/3bff6705f25a40da8b8626f5cf9cd637
Autor:
Henrik Wördenweber, Silvia Karthäuser, Annika Grundmann, Zhaodong Wang, Stephan Aussen, Holger Kalisch, Andrei Vescan, Michael Heuken, Rainer Waser, Susanne Hoffmann-Eifert
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-13 (2022)
Abstract Metal-free chemical vapor deposition (CVD) of single-layer graphene (SLG) on c-plane sapphire has recently been demonstrated for wafer diameters of up to 300 mm, and the high quality of the SLG layers is generally characterized by integral m
Externí odkaz:
https://doaj.org/article/7e7775063c2b42a5ab20cdb8671c41c2
Autor:
Amir Ghiami, Tianyishan Sun, Hleb Fiadziushkin, Songyao Tang, Annika Grundmann, Michael Heuken, Holger Kalisch, Andrei Vescan
Publikováno v:
Crystals, Vol 13, Iss 10, p 1474 (2023)
Extensive research into two-dimensional transition metal dichalcogenides (2D-TMDCs) over the past decade has paved the way for the development of (opto)electronic devices with enhanced performance and novel capabilities. To realize devices based on 2
Externí odkaz:
https://doaj.org/article/9156f6d3e70d49b09c22156df0ba7b64
Autor:
Paula Palacios, Muh‐Dey Wei, Thorsten Zweipfennig, Ahmed Hamed, Carsten Beckmann, Holger Kalisch, Andrei Vescan, Renato Negra
Publikováno v:
Electronics Letters, Vol 57, Iss 3, Pp 148-150 (2021)
Abstract A high‐temperature 2.1 GHz oscillator based on a AlGaN/GaN high electron mobility transistor (HEMT) is successfully designed, implemented, and characterised for the first time. The system is explicitly designed such that the final circuit
Externí odkaz:
https://doaj.org/article/cb71ab1959d94d299ed054835f98485d
Autor:
Songyao Tang, Annika Grundmann, Hleb Fiadziushkin, Zhaodong Wang, Susanne Hoffmann-Eifert, Amir Ghiami, Arne Debald, Michael Heuken, Andrei Vescan, Holger Kalisch
Publikováno v:
Crystal Growth & Design. 23:1547-1558
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23c5ed287a3323b5aac2adaec7429a42
https://doi.org/10.1021/acs.cgd.2c01134
https://doi.org/10.1021/acs.cgd.2c01134
Autor:
Songyao Tang, Annika Grundmann, Hleb Fiadziushkin, Amir Ghiami, Michael Heuken, Andrei Vescan, Holger Kalisch
Publikováno v:
MRS advances 7(30), 751-756 (2022). doi:10.1557/s43580-022-00312-4 special issue: "Research Snapshots from MRS"
MRS advances (2022). doi:10.1557/s43580-022-00312-4
Published by Springer Nature Switzerland AG, Cham
Published by Springer Nature Switzerland AG, Cham
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d22ffbdb58a682eed06ff02e25448334
https://doi.org/10.1557/s43580-022-00312-4
https://doi.org/10.1557/s43580-022-00312-4
Publikováno v:
Light-Emitting Devices, Materials, and Applications XXVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0947e31776e98204c207321bb4ae817
https://doi.org/10.1117/12.2648731
https://doi.org/10.1117/12.2648731