Zobrazeno 1 - 10
of 189
pro vyhledávání: '"Andrei, Osinsky"'
Publikováno v:
APL Materials, Vol 9, Iss 9, Pp 091102-091102-11 (2021)
We report on the Ge doping of Ga2O3 using metalorganic chemical vapor deposition (MOCVD) epitaxy. The effects of the GeH4/N2 flow rate, substrate temperature, VI/III ratio, type of Ga precursor, and MOCVD reactor geometry on the incorporation efficie
Externí odkaz:
https://doaj.org/article/7b28c88c90814f03871883a834722b34
Autor:
Hsiao-Hsuan Wan, Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Fan Ren, Hannah Masten, James Spencer Lundh, Joseph Spencer, Fikadu Alema, Andrei Osinsky, Alan G. Jacobs, Karl D. Hobart, Marko J. Tadjer, Stephen J Pearton
Publikováno v:
ECS Transactions. 111:85-96
NiO/ β-(Al x Ga1-x )2O3 /Ga2O3 heterojunction lateral geometry rectifiers with diameter 50-100 µm exhibited maximum reverse breakdown voltages >7kV, showing the advantage of increasing the bandgap using the β-(Al x Ga1-x )2O3 alloy. This Si-doped
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a31fd77bea88c94b26774915bee12ac1
https://doi.org/10.1149/11102.0085ecst
https://doi.org/10.1149/11102.0085ecst
Autor:
Fikadu Alema, Yuewei Zhang, Akhil Mauze, Takeki Itoh, James S. Speck, Brian Hertog, Andrei Osinsky
Publikováno v:
AIP Advances, Vol 10, Iss 8, Pp 085002-085002-5 (2020)
The role of water (H2O) vapor in reducing background impurity concentration in epitaxial Ga2O3 thin films grown by metalorganic chemical vapor deposition (MOCVD) was studied. Adding H2O vapor to oxygen was found to increase the surface roughness and
Externí odkaz:
https://doaj.org/article/4398800e478f4c15b0863c434153385b
Autor:
Fikadu Alema, Yuewei Zhang, Andrei Osinsky, Nazar Orishchin, Nicholas Valente, Akhil Mauze, James S. Speck
Publikováno v:
APL Materials, Vol 8, Iss 2, Pp 021110-021110-9 (2020)
We report on record low free carrier concentration values in metalorganic chemical vapor deposition (MOCVD) grown β-Ga2O3 by using N2O for oxidation. Contrary to the pure oxygen, the N2O oxidant produced β-Ga2O3 thin films co-doped with nitrogen an
Externí odkaz:
https://doaj.org/article/5dea3414848e4a1f9acd5d590b2b6a42
Autor:
Timothy A. Morgan, Justin Rudie, Mohammad Zamani-Alavijeh, Andrian V. Kuchuk, Nazar Orishchin, Fikadu Alema, Andrei Osinsky, Robert Sleezer, Gregory Salamo, Morgan E. Ware
Publikováno v:
ACS Applied Materials & Interfaces. 14:33944-33951
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c95d780783583af543568dcb79f4fcb4
https://doi.org/10.1021/acsami.2c04177
https://doi.org/10.1021/acsami.2c04177
Autor:
Fikadu Alema, Yuewei Zhang, Andrei Osinsky, Nicholas Valente, Akhil Mauze, Takeki Itoh, James S. Speck
Publikováno v:
APL Materials, Vol 7, Iss 12, Pp 121110-121110-6 (2019)
We report on record electron mobility values measured in lightly Si doped homoepitaxial β-Ga2O3 grown by metal-organic chemical vapor deposition. The transport properties of the films were studied using temperature-dependent Hall measurements. Numer
Externí odkaz:
https://doaj.org/article/273f548950924ea2a72a65b8d060ad6d
MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature
Autor:
Yuewei Zhang, Fikadu Alema, Akhil Mauze, Onur S. Koksaldi, Ross Miller, Andrei Osinsky, James S. Speck
Publikováno v:
APL Materials, Vol 7, Iss 2, Pp 022506-022506-6 (2019)
In this work, we report record electron mobility values in unintentionally doped β-Ga2O3 films grown by metal-organic chemical vapor deposition. Using degenerately Sn-doped regrown n+ β-Ga2O3 contact layers, we were able to maintain Ohmic contact t
Externí odkaz:
https://doaj.org/article/67fc6ec8ec7f40c9818657ff715cc239
Autor:
Fikadu Alema, Brian Hertog, Partha Mukhopadhyay, Yuewei Zhang, Akhil Mauze, Andrei Osinsky, Winston V. Schoenfeld, James S. Speck, Timothy Vogt
Publikováno v:
APL Materials, Vol 7, Iss 2, Pp 022527-022527-6 (2019)
We report on a high performance Pt/n−Ga2O3/n+Ga2O3 solar blind Schottky photodiode that has been grown by metalorganic chemical vapor deposition. The active area of the photodiode was fabricated using ∼30 Å thick semi-transparent Pt that has up
Externí odkaz:
https://doaj.org/article/a9ab2e2ee5ca442daf4e8a905d9c4fa9
Publikováno v:
Oxide-based Materials and Devices XIV.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::865e3ce074af5e69524e1d5a7f675068
https://doi.org/10.1117/12.2668702
https://doi.org/10.1117/12.2668702
Publikováno v:
Ultrawide Bandgap β-Ga2O3 Semiconductor ISBN: 9780735425033
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df1e588e60ace00ca9501c8d6ab69445
https://doi.org/10.1063/9780735425033_003
https://doi.org/10.1063/9780735425033_003
