Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Andreas Wohlfart"'
Autor:
Andreas Wohlfart, Michael Vogel, Erwin Schmitt, Arnd Dietrich Weber, S. Storm, Thomas Straubinger
Publikováno v:
Materials Science Forum. :3-8
One of the most crucial defects for the device fabrication on silicon carbide (SiC) substrates are areas with low crystalline quality and micro-pipe clusters which can still occupy several percent of the area in commercial available 4H-substrates. Th
Publikováno v:
Materials Science Forum. :11-14
We carried out investigations to elucidate the reasons for polytype changes in 4H. The aim was to sustain polytype stability throughout the entire process. The investigations were accompanied by studies on the formation of basal plane dislocations an
Publikováno v:
Journal of Crystal Growth. 310:966-970
In this work, we present recent results on development and production of n-type 4 H bulk material. From previous studies it is evident that inclusions of foreign polytypes can act as origin of severe structural imperfections [N. Schulze, D.L. Barret,
Publikováno v:
Chemical communications (Cambridge, England). (9)
Controlled growth of oriented GaN nanopillars and randomly distributed nanowires is accomplished by MOCVD using (N3)2Ga[(CH2)3NMe2] as a single molecule precursor.
Autor:
Julia Hambrock, Stefan Rabe, Klaus Merz, Alexander Birkner, Andreas Wohlfart, Roland A. Fischer, Matthias Driess
Publikováno v:
Journal of Materials Chemistry; Jun2003, Vol. 13 Issue 7, p1731-1736, 6p
Autor:
Jayaprakash Khanderi, Andreas Wohlfart, Harish Parala, Anjana Devi, Julia Hambrock, Alexander Birkner, Roland. A. Fischer
Publikováno v:
Journal of Materials Chemistry; May2003, Vol. 13 Issue 6, p1438, 9p