Embedding Solutions for vertical SiC and GaN Power Devices

Autor: Hoang Linh Bach, Anqi Huang, Yue Teng, Hubert Rauh, Andreas Schletz, Michael P. M. Jank, Martin Marz

Publikováno v: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA).

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::787fb4b062379da818f6387a7960c773
https://doi.org/10.1109/wipda56483.2022.9955257

Stackable SiC-Embedded Ceramic Packages for High-Voltage and High-Temperature Power Electronic Applications

Autor: Hoang Linh Bach, Daniel Dirksen, Christoph Blechinger, Tobias Maximilian Endres, Christoph Friedrich Bayer, Andreas Schletz, Martin März

Publikováno v: Journal of Microelectronics and Electronic Packaging. 16:176-181

This study encompasses the development of a high-voltage and high-temperature–capable package for power electronic applications based on the embedding of silicon carbide (SiC) semiconductor devices in the ceramic circuit carrier such as the direct

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0c48e24de46438b9df1d85cc4c5d1bbf
https://doi.org/10.4071/imaps.952440

Effect of short-circuit degradation on the remaining useful lifetime of SiC MOSFETs and its failure analysis

Autor: Thomas Goetz, Nick Baker, Andreas Schletz, Francesco Iannuzzo, Sebastian Letz, He Du

Publikováno v: Du, H, Letz, S, Baker, N, Goetz, T, Iannuzzo, F & Schletz, A 2020, ' Effect of short-circuit degradation on the remaining useful lifetime of SiC MOSFETs and its failure analysis ', Microelectronics Reliability, vol. 114, 113784, pp. 1-5 . https://doi.org/10.1016/j.microrel.2020.113784

When the SiC MOSFET works in the normal operating conditions, its remaining useful lifetime used to be estimated based on the monitored parameters and the lifetime model derived from accelerated tests. In this case, the degradation caused by abnormal

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::134a7e852606f4ebfa96d0341b04565d
https://vbn.aau.dk/ws/files/408869499/HDU_MR2020.pdf

Real embedding process of SiC devices in a monolithic ceramic package using LTCC technology

Autor: Steffen Ziesche, Hoang Linh Bach, Tobias Erlbacher, Christian Lenz, Andreas Schletz

Publikováno v: 2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC).

Low temperature co-fired ceramics (LTCC) is a well-established multilayer technology for the fabrication of reliable and robust ceramic circuit boards, microsystems and sensor packages. Its ability to combine several single layer which can be geometr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::339a18f148c3d29b24c4cdd1a328d065
https://doi.org/10.1109/estc48849.2020.9229653

Combined experimental and numerical approach for investigating the mechanical degradation of the interface between thin film metallization and Si-substrate after temperature cycling test

Autor: Z. Yu, Martin Marz, S. Letz, D. Zhao, Andreas Schletz

The thin film metallization, as a key structure of the semiconductor devices, realizes the bond-ability of the chips on circuit carriers and directly influences the electrical and mechanical reliability of the interconnection. In a previous study, a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90470a13f8cf36663aabe74169eb1a95
https://publica.fraunhofer.de/handle/publica/264831