Zobrazeno 1 - 10
of 147
pro vyhledávání: '"Andreas Schlachetzki"'
Autor:
A. Matiss, Werner Prost, A.-C. Mofor, V. Khorenko, A. Poloczek, Andrey Bakin, Andreas Schlachetzki, Franz-Josef Tegude, S. Neumann
Publikováno v:
Applied Physics A. 87:539-544
We report on the fabrication of high performance InP-based devices on an exact (001)Si-substrate. On an InP-on-Si quasi-substrate, the growth of superlattices and low-temperature InAlAs buffer for surface and device layer improvement is investigated.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3879f03f63e1acb18123a05547694beb
https://doi.org/10.1007/s00339-007-3920-1
https://doi.org/10.1007/s00339-007-3920-1
Autor:
D.M. Gvozdic, Andreas Schlachetzki
Publikováno v:
IEEE Journal of Quantum Electronics. 41:842-847
We analyze the modulation speed of an InGaAs-InP quantum-wire laser of a V-groove-shaped structure. The bandwidth is affected by the optical confinement /spl Gamma/, exhibiting a maximum at /spl Gamma/=0.016. The maximum bandwidth for the intrinsic d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d8b7e672e0bad039d4abd96f5807b35
https://doi.org/10.1109/jqe.2005.846690
https://doi.org/10.1109/jqe.2005.846690
Autor:
Andreas Schlachetzki, Dejan M. Gvozdić
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 9:732-735
In this paper, we investigate the influence of the temperature on gain and threshold current density of a V-groove quantum wire InGaAs/InP laser. The calculation shows that room-temperature operation can be achieved if the optical confinement is larg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7ed57565148af4a4ccb7770a64288ee
https://doi.org/10.1109/jstqe.2003.818857
https://doi.org/10.1109/jstqe.2003.818857
Autor:
P. Velling, Werner Prost, Franz-Josef Tegude, Hergo-H. Wehmann, S. Neumann, Andreas Schlachetzki, Andrey Bakin
Publikováno v:
Journal of Crystal Growth. 248:380-383
We present in this work the first monolithic integration of a III/V resonant tunnelling diode (RTD) on an exactly (0 0 1)-oriented Si substrate. The crystalline quality of the InP starting layer and that of the RTD was determined by high-resolution X
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8734b62baee72b11244128cc30b3b403
https://doi.org/10.1016/s0022-0248(02)01852-3
https://doi.org/10.1016/s0022-0248(02)01852-3
Publikováno v:
IEEE Journal of Quantum Electronics. 38:1565-1579
This paper presents material-gain and threshold-current calculation of a InGaAs-InP quantum-wire laser in the framework of the k/sub /spl middot//p method, with included conduction-band nonparabolicity for the first time. The method for band-structur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::304f09d85c92bf67d3b197c0b9b040cb
https://doi.org/10.1109/jqe.2002.805106
https://doi.org/10.1109/jqe.2002.805106
Autor:
Erwin Peiner, Detlef Fehly, Alexey Ivanov, Hergo-Heinrich Wehmann, Andreas Schlachetzki, Dirk Piester, Andrey Bakin, Ingo Behrens
Publikováno v:
Crystal Growth & Design. 3:89-93
For industrial applications of III/V on Si heteroepitaxial structures on exactly oriented (001)Si substrates are a prerequisite. An approach for high-quality InP on (001)Si is the growth on a patterned substrate. We employed nanometer-scale patternin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0362e43e1cf76a03b8c8283a994dae6
https://doi.org/10.1021/cg025558s
https://doi.org/10.1021/cg025558s
Autor:
Andreas Schlachetzki, Dejan M. Gvozdić
Publikováno v:
Journal of Applied Physics. 92:2023-2034
The article proposes a method to calculate eigenstates and eigenfunctions of the conduction band in V-groove quantum wires, which is based on conformal mapping and Fourier expansion. Consequently, the method relies essentially on an analytical calcul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b02ea661208eaa286923f04d4fe27d36
https://doi.org/10.1063/1.1495091
https://doi.org/10.1063/1.1495091
Publikováno v:
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::92ae3799c39774f020e5be8a027814cb
https://doi.org/10.4028/www.scientific.net/ddf.206-207.179
https://doi.org/10.4028/www.scientific.net/ddf.206-207.179
Autor:
Andrey Bakin, J. Rösler, Frank Klose, Hergo-Heinrich Wehmann, U. Harms, Andreas Schlachetzki, Erwin Peiner, Hartmut Neuhäuser, Ingo Behrens
Publikováno v:
Journal of Applied Physics. 91:9031-9038
The effect of Fe doping on the elastic and anelastic properties of heteroepitaxial InP films on microfabricated silicon cantilevers has been investigated by the vibrating-reed technique (typical frequencies 100 Hz to 10 kHz) with strain amplitudes in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a80f771b1a25bfb4f85e3580f00c44a4
https://doi.org/10.1063/1.1471921
https://doi.org/10.1063/1.1471921
Autor:
A.A. Ivanov, Dirk Piester, Hergo-Heinrich Wehmann, Erwin Peiner, Ingo Behrens, Andrey Bakin, Andreas Schlachetzki
Publikováno v:
Materials Science Forum. :327-330
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e54315860b5afdeb919443536039573
https://doi.org/10.4028/www.scientific.net/msf.389-393.327
https://doi.org/10.4028/www.scientific.net/msf.389-393.327