Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Andreas Nägelein"'
Autor:
Oliver Supplie, Matthias M. May, Peter Kleinschmidt, Andreas Nägelein, Agnieszka Paszuk, Sebastian Brückner, Thomas Hannappel
Publikováno v:
APL Materials, Vol 3, Iss 12, Pp 126110-126110-6 (2015)
Metalorganic vapor phase epitaxy of III-V compounds commonly involves arsenic. We study the formation of atomically well-ordered, As-modified Si(100) surfaces and subsequent growth of GaP/Si(100) quasisubstrates in situ with reflection anisotropy spe
Externí odkaz:
https://doaj.org/article/d3ec078d191d4bd6b8deb965132be78d
Autor:
Andreas Nägelein, Markus Keite
Publikováno v:
BWK ENERGIE.. 72:51-53
Blockheizkraftwerke (BHKW) sind heute aus der dezentralen Strom- und Wärmeerzeugung nicht mehr wegzudenken. Die flexible und schnelle Verfügbarkeit von Stationär-Motoren kann schwankende Lasten im Stromnetz gezielt ausgleichen und macht diese Tech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a5497a7d89fa5a6d0c3a8c5ba444876
https://doi.org/10.37544/1618-193x-2020-10-11-51
https://doi.org/10.37544/1618-193x-2020-10-11-51
Autor:
Andreas Nägelein, Thomas Hannappel, Cornelia Timm, Peter Kleinschmidt, Klaus Schwarzburg, Matthias Steidl
Publikováno v:
Solar Energy Materials and Solar Cells. 197:13-18
The efficiency of novel opto-electronic devices e.g. solar cells crucially depends on controlling the doping levels in the device. Decreasing the size of the structure by employing nanowires is attractive for several reasons, for instance reduced mat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bd13ada1c02f574d218c1579cf90e66
https://doi.org/10.1016/j.solmat.2019.03.049
https://doi.org/10.1016/j.solmat.2019.03.049
Publikováno v:
IEEE Journal of Photovoltaics. 9:673-678
Catalysis-assisted vapor–liquid–solid nanowire (NW) growth offers opportunities to prepare versatile, axial, and radial III–V homo- and hetero-structures, which combine multiple scientific and economic benefits including applications in innovat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7af58118228dc04e187187998fe2009f
https://doi.org/10.1109/jphotov.2019.2894065
https://doi.org/10.1109/jphotov.2019.2894065
Autor:
Erich Runge, Andreas Nägelein, Oliver Supplie, Anja Dobrich, Peter Kleinschmidt, Matthias Steidl, Oleksandr Romanyuk, Agnieszka Paszuk, Thomas Hannappel, Lars Winterfeld, Christian Koppka
Publikováno v:
Progress in Crystal Growth and Characterization of Materials. 64:103-132
The integration of III–V semiconductors with Si has been pursued for more than 25 years since it is strongly desired in various high-efficiency applications ranging from microelectronics to energy conversion. In the last decade, there have been tre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68cfca3aec9e9e1bc214446d6723e9a4
https://doi.org/10.1016/j.pcrysgrow.2018.07.002
https://doi.org/10.1016/j.pcrysgrow.2018.07.002
Publikováno v:
2019 Compound Semiconductor Week (CSW).
We report on the characterization of n-doped InGaP nanowire shells in GaAs/InGaP core-multishell nanowires grown by metal organic vapor phase epitaxy. Multi-tip scanning tunneling microscopy allowed for contact independent resistance profiling of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c746459ec7c615c612285fc4a2c34a6f
https://doi.org/10.1109/iciprm.2019.8819134
https://doi.org/10.1109/iciprm.2019.8819134
Autor:
Oleksandr Romanyuk, Oliver Supplie, Thomas Hannappel, Gernot Ecke, Pingo Mutombo, Christian Koppka, Peter Kleinschmidt, Andreas Nägelein, Stefan Krischok, Matthias Steidl, Agnieszka Paszuk, Theresa Berthold, Marcel Himmerlich
Publikováno v:
Applied Surface Science. 534:147346
Controlling the surface formation of the group-V face of (1 1 1)-oriented III-V semiconductors is crucial for subsequent successful growth of III-V nanowires for electronic and optoelectronic applications. With a view to preparing GaP/Si(1 1 1) virtu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aabb414d67ad317370c036499b5b94ff
https://doi.org/10.1016/j.apsusc.2020.147346
https://doi.org/10.1016/j.apsusc.2020.147346
Autor:
Oliver Supplie, Masakazu Sugiyama, Boram Kim, Sebastian Brückner, Anja Dobrich, Yoshiaki Nakano, Thomas Hannappel, Peter Kleinschmidt, Matthias M. May, Andreas Nägelein, Aznieszka Paszuk
Publikováno v:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
III–V integration on Si processed in MOCVD ambient which contains As opens up new opportunities for high-efficiency multi-junction solar cells. Here, we study the interaction of As with vicinal Si(100) surfaces, the formation of atomically well-ord
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa936fdbfc02bfa61c98644fabf7f612
https://doi.org/10.1109/pvsc.2017.8366561
https://doi.org/10.1109/pvsc.2017.8366561
Autor:
Werner Prost, Andreas Nägelein, Nils Weimann, Thomas Hannappel, A. Poloczek, Franz-Josef Tegude, Jan Bieniek, Lisa Liborius
Publikováno v:
physica status solidi (b). 257:1900358
Herein, the characterization of n-doped InGaP:Si shells in coaxial not-intentionally doped (nid)-GaAs/n-InGaP as well as n–p–n core–multishell nanowires grown by metalorganic vapor-phase epitaxy is reported. The multi-tip scanning tunneling mic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf5d1b9bdc7f77367cab7b38ef60116a
https://doi.org/10.1002/pssb.201900358
https://doi.org/10.1002/pssb.201900358
Autor:
Andreas Nägelein, Werner Prost, Bert Voigtländer, Peter Kleinschmidt, Vasily Cherepanov, Thomas Hannappel, Stefan Korte, Matthias Steidl
Publikováno v:
Journal of Physics: Condensed Matter. 31:074004
The charge transport through GaAs nanowires, partially p-doped and partially intrinsic, is analyzed by four-point resistance profiling along freestanding nanowires using a multip-STM. The charge transport channel in the undoped segment is assigned to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0c5d177b9c2ebcddd4c98d5c600d6a76
https://doi.org/10.1088/1361-648x/aaf515
https://doi.org/10.1088/1361-648x/aaf515