Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Andreas Kelling"'
Autor:
Benedikt Ifland, Patrick Peretzki, Birte Kressdorf, Philipp Saring, Andreas Kelling, Michael Seibt, Christian Jooss
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 6, Iss 1, Pp 1467-1484 (2015)
After a general introduction into the Shockley theory of current voltage (J–V) characteristics of inorganic and organic semiconductor junctions of different bandwidth, we apply the Shockley theory-based, one diode model to a new type of perovskite
Externí odkaz:
https://doaj.org/article/50fa09e76f3d42f7a771a224a766bad5
Autor:
Cynthia A. Volkert, K. R. Mangipudi, Hans-Ulrich Krebs, Tobias Liese, Inga Knorr, Andreas Kelling
Publikováno v:
Scripta Materialia. 115:42-45
In-situ transmission electron microscopy is used to investigate crack propagation parallel to the interfaces of a Ti/ZrO 2 multilayer. The cracks propagate along the middle of the 100 nm thick polycrystalline Ti layers, causing extensive dislocation
Autor:
Michael Seibt, Andreas Kelling, Birte Kressdorf, Patrick Peretzki, Christian Jooss, Benedikt Ifland, P. Saring
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 6, Iss 1, Pp 1467-1484 (2015)
Beilstein Journal of Nanotechnology
Beilstein Journal of Nanotechnology
After a general introduction into the Shockley theory of current voltage (J–V) characteristics of inorganic and organic semiconductor junctions of different bandwidth, we apply the Shockley theory-based, one diode model to a new type of perovskite
Publikováno v:
Microscopy and Microanalysis. 18:762-763
Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.