Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Andreas Huerner"'
Autor:
Maximilian W. Feil, Andreas Huerner, Katja Puschkarsky, Christian Schleich, Thomas Aichinger, Wolfgang Gustin, Hans Reisinger, Tibor Grasser
Publikováno v:
Crystals, Vol 10, Iss 12, p 1143 (2020)
Silicon carbide is an emerging material in the field of wide band gap semiconductor devices. Due to its high critical breakdown field and high thermal conductance, silicon carbide MOSFET devices are predestined for high-power applications. The concen
Externí odkaz:
https://doaj.org/article/bbd5655d89664d53bf82cabcad661c74
Autor:
Gian Domenico Licciardo, Luigi Di Benedetto, Alfredo Rubino, Andreas Huerner, Tobias Erlbacher, Anton J. Bauer
Publikováno v:
Materials Science Forum. 963:697-700
In this paper the Bipolar Mode Field Effect Transistor (BMFET) is demonstrated for the first time in 4H-SiC. The structure is based by two p+-type regions symmetrically placed at both sides of a n-type region channel and the device implements two con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f093b01d0c013bf0a83edeaf27333d0f
https://doi.org/10.4028/www.scientific.net/msf.963.697
https://doi.org/10.4028/www.scientific.net/msf.963.697
Publikováno v:
Solid-State Electronics. 144:101-105
In this study, the influence of the emitter efficiency on the forward current–voltage characteristics, especially the conductivity modulation of bipolar SiC-diodes was analyzed. It was determined that the emitter efficiency of p-emitters formed by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e56c46166e6010eb403515f1e579872
https://doi.org/10.1016/j.sse.2018.03.010
https://doi.org/10.1016/j.sse.2018.03.010
Autor:
Linh Bach, Andreas Huerner, Lutz Kirste, Yi Lin Zhu, Andreas Schletz, Anton J. Bauer, Lothar Frey, Christian Giese, Tobias Erlbacher, Lucas Pinti, Christoph E. Nebel, Verena Zuerbig
Publikováno v:
Materials Science Forum. 924:931-934
Schottky diodes fabricated on free-standing B doped monocrystalline diamond substrate have been investigated. As expected, reverse leakage current due to Schottky barrier lowering has been observed due to the high electric field at the metal-semicond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf559094cac2092c176b3a8da37ec8f4
https://doi.org/10.4028/www.scientific.net/msf.924.931
https://doi.org/10.4028/www.scientific.net/msf.924.931
Autor:
Andreas Huerner, Anton J. Bauer, Thomas Heckel, Achim Endruschat, Lothar Frey, Tobias Erlbacher
Publikováno v:
Materials Science Forum. 924:901-904
In this study, the influence of the gate-source voltage on the forward conduction properties of the body-diode in SiC-MOSFETs is demonstrated experimentally and analyzed by numerical simulations. Thereby, it can be figured out that the conduction pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60154ad56fd8901798bc2a05374d9af8
https://doi.org/10.4028/www.scientific.net/msf.924.901
https://doi.org/10.4028/www.scientific.net/msf.924.901
Publikováno v:
Materials Science Forum. 897:661-664
In this study, the basic device features of a novel monolithically integrated solid-state-circuit-breaker (MI-SSCB) are demonstrated and analyzed using numerical simulations. Thereby, the MI-SSCB is built according to the concept of the dual thyristo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a3647d899199e7a53b8d73a8a41b28e
https://doi.org/10.4028/www.scientific.net/msf.897.661
https://doi.org/10.4028/www.scientific.net/msf.897.661