Zobrazeno 1 - 10
of 136
pro vyhledávání: '"Andreas Fissel"'
Autor:
Kritika Ghosh, Avijit Dhara, Sajal Dhara, Andreas Fissel, Hans-Jörg Osten, Ayan Roy Chaudhuri
Publikováno v:
ACS Applied Nano Materials. 5:9567-9575
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce8ac7bf77da84418c10dc4e9b7e7ce7
https://doi.org/10.1021/acsanm.2c01767
https://doi.org/10.1021/acsanm.2c01767
Publikováno v:
ECS Transactions. 93:57-60
Gadolinium oxide (Gd2O3) was grown at low temperatures (250 °C) on Si(001) using molecular beam epitaxy. The crystal structure was investigated with X-ray diffraction experiments, where the crystal structure changes from cubic to monoclinic dependin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3906f9994f05bd2c2423f1297b32ca7a
https://doi.org/10.1149/09301.0057ecst
https://doi.org/10.1149/09301.0057ecst
Publikováno v:
Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials. 75:59-70
The influence of growth conditions on the layer orientation, domain structure and crystal structure of gadolinium oxide (Gd2O3) on silicon (001) has been investigated. Gd2O3 was grown at low (250°C) and high (850°C) temperatures with different oxyg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a5767fa013f1fef713c7a51322dda61
https://doi.org/10.1107/s2052520618017869
https://doi.org/10.1107/s2052520618017869
Autor:
Philipp, Gribisch, Andreas, Fissel
Publikováno v:
RSC advances. 11(29)
The structural and morphological properties of gadolinium oxide (Gd
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::a4f5ce268007fad52a2a8f0163dd05d2
https://pubmed.ncbi.nlm.nih.gov/35480161
https://pubmed.ncbi.nlm.nih.gov/35480161
Autor:
Philipp Gribisch, Andreas Fissel
Publikováno v:
Semiconductor Science and Technology. 36:115016
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2d1989c4fa974fd336c8c022bda59ca
https://doi.org/10.1088/1361-6641/ac2962
https://doi.org/10.1088/1361-6641/ac2962
Publikováno v:
Applied Surface Science. 370:40-48
In this paper we investigate the initial stages of epitaxial growth of Ge on Si(1 1 1) and the impact of growth temperature on strain evolution in situ by reflection high energy electron diffraction (RHEED) for temperatures between 200 °C and 400 °
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::328bde1eaad3c3b79b487c6935895a22
https://doi.org/10.1016/j.apsusc.2016.02.144
https://doi.org/10.1016/j.apsusc.2016.02.144
Autor:
Andreas Fissel, P. Gribisch
Publikováno v:
Journal of Applied Physics. 128:055108
The structural and dielectric properties of gadolinium oxide (Gd 2O 3) grown on Si(001) depending on the epitaxial growth conditions were investigated. Gd 2O 3 layers were grown at temperatures between 250 ° C and 400 ° C with an oxygen partial pre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::055ae6d5d88b554caeb7d9cb467903cc
https://doi.org/10.1063/5.0007793
https://doi.org/10.1063/5.0007793
Influence of nanostructure formation on the crystal structure and morphology of epitaxially grown Gd
Publikováno v:
Acta crystallographica Section B, Structural science, crystal engineering and materials. 75(Pt 1)
The influence of growth conditions on the layer orientation, domain structure and crystal structure of gadolinium oxide (Gd
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::715b4d64340bcd40bf848b10a6789959
https://pubmed.ncbi.nlm.nih.gov/32830779
https://pubmed.ncbi.nlm.nih.gov/32830779
Publikováno v:
Journal of Crystal Growth. 425:154-157
The step-flow growth condition of Si on Si (111) near the (7×7)–“1×1” surface phase transition temperature TC is analysed within the framework of Burton–Cabrera–Frank theory. In particular, coexistence of both surface phases well below TC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82f112056b1d83638f3a871caab7d759
https://doi.org/10.1016/j.jcrysgro.2015.02.041
https://doi.org/10.1016/j.jcrysgro.2015.02.041
Publikováno v:
Frontiers of Materials Science. 9:141-146
The step-flow growth condition of Si on Si(111) near the (7×7)-“1×1” surface phase transition temperature T C are analyzed within the framework of Burton-Cabrera-Frank theory. In particular, coexistence of both surface phases well below T C and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ca19179a942b53deadbca7a932ea874
https://doi.org/10.1007/s11706-015-0282-z
https://doi.org/10.1007/s11706-015-0282-z