Zobrazeno 1 - 10
of 189
pro vyhledávání: '"Andreas Fiedler"'
Autor:
Palvan Seyidov, Joel B. Varley, Zbigniew Galazka, Ta-Shun Chou, Andreas Popp, Andreas Fiedler, Klaus Irmscher
Publikováno v:
APL Materials, Vol 10, Iss 11, Pp 111109-111109-9 (2022)
Optical absorption and photoconductivity measurements of Co-doped β-Ga2O3 crystals reveal the photon energies of optically excited charge transfer between the Co related deep levels and the conduction or valence band. The corresponding photoionizati
Externí odkaz:
https://doaj.org/article/46235c0c42994bb89ea26edd9cb24222
Feasibility of a Complex Setting for Assessing Sleep and Circadian Rhythmicity in a Fragile X Cohort
Autor:
Alexander Dueck, Olaf Reis, Manuela Bastian, Lucas van Treeck, Steffen Weirich, Frank Haessler, Andreas Fiedler, Michael Koelch, Christoph Berger
Publikováno v:
Frontiers in Psychiatry, Vol 11 (2020)
IntroductionSleep, circadian rhythms, (mental) health, and development are assumed to be intertwined. However, differentiated and reliable parameters of sleep and circadian rhythms are particularly difficult to assess for Fragile X (FXS) individuals.
Externí odkaz:
https://doaj.org/article/5faa192623d24a029271accb1a14f5f1
Autor:
Sigrid Claudia Disse, Antonia Zapf, Fritz Schneble, Andreas Fiedler, Hamid Hossain, Alexander von Meyer
Publikováno v:
Infection. 50:1329-1348
In infections of the Central Nervous System (iCNS), rapid identification of causing pathogens is crucial for survival and to avoid long-term sequelae. Targeted therapy may reduce side effects and development of antibiotic resistance. New molecular-ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::617de275ff4aef162aac64cde670c1b7
https://doi.org/10.1007/s15010-022-01836-5
https://doi.org/10.1007/s15010-022-01836-5
Autor:
Zbigniew Galazka, Steffen Ganschow, Robert Schewski, Klaus Irmscher, Detlef Klimm, Albert Kwasniewski, Mike Pietsch, Andreas Fiedler, Isabelle Schulze-Jonack, Martin Albrecht, Thomas Schröder, Matthias Bickermann
Publikováno v:
APL Materials, Vol 7, Iss 2, Pp 022512-022512-12 (2019)
Truly bulk ZnGa2O4 single crystals were obtained directly from the melt. High melting point of 1900 ± 20 °C and highly incongruent evaporation of the Zn- and Ga-containing species impose restrictions on growth conditions. The obtained crystals are
Externí odkaz:
https://doaj.org/article/d858b5e8bb4347ca85892eb17ac1fc82
Autor:
Kornelius Tetzner, Andreas Thies, Palvan Seyidov, Ta-Shun Chou, Jana Rehm, Ina Ostermay, Zbigniew Galazka, Andreas Fiedler, Andreas Popp, Joachim Würfl, Oliver Hilt
Publikováno v:
Journal of Vacuum Science & Technology A. 41
In this work, we analyze the optimum annealing conditions for the activation of Ge-implanted β-Ga2O3 in order to reach low ohmic contact resistances. The experiments involved the use of a pulsed rapid thermal annealing treatment at temperatures betw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b78f4c7df017c06fe843d7539e3f7d0
https://doi.org/10.1116/6.0002642
https://doi.org/10.1116/6.0002642
Publikováno v:
GELD-Magazin. Jul/Aug2020, p51-51. 1/2p.
Autor:
Ta-Shun Chou, Palvan Seyidov, Saud Bin Anooz, Raimund Grüneberg, Jana Rehm, Thi Thuy Vi Tran, Andreas Fiedler, Kornelius Tetzner, Zbigniew Galazka, Martin Albrecht, Andreas Popp
Publikováno v:
Japanese Journal of Applied Physics. 62:SF1004
Absrtract In this work, we comprehensively investigate the development of unwanted parasitic particles in the MOVPE chamber while growing μm level films. The density of the parasitic particles is found to be pronounced at film thicknesses starting f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13cbd1fa42189c80c3bdb8bbd7642eba
https://doi.org/10.35848/1347-4065/acb360
https://doi.org/10.35848/1347-4065/acb360
Autor:
Zbigniew Galazka, Andreas Fiedler, Andreas Popp, Steffen Ganschow, Albert Kwasniewski, Palvan Seyidov, Mike Pietsch, Andrea Dittmar, Saud Bin Anooz, Klaus Irmscher, Manuela Suendermann, Detlef Klimm, Ta-Shun Chou, Jana Rehm, Thomas Schroeder, Matthias Bickermann
Publikováno v:
Journal of Applied Physics. 133:035702
We have systematically studied the growth, by the Czochralski method, and basic physical properties of a 2 cm and 2 in. diameter bulk β-(AlxGa1−x)2O3 single crystal with [Al] = 0–35 mol. % in the melt in 5 mol. % steps. The segregation coefficie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c1f9c68c2beaf49705f995a7d5460c2
https://doi.org/10.1063/5.0131285
https://doi.org/10.1063/5.0131285
Autor:
Jana Rehm, Ta-Shun Chou, Saud Bin Anooz, Palvan Seyidov, Andreas Fiedler, Zbigniew Galazka, Andreas Popp
Publikováno v:
Applied Physics Letters. 121:240503
Beta gallium oxide (β-Ga2O3) is a promising ultra-wide bandgap semiconductor with attractive physical properties for next-generation high-power devices, radio frequency electronics, and solar-blind ultraviolet radiation detectors. Here, we present a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3d719c9ee20f5d22cc269be5f3e7720
https://doi.org/10.1063/5.0122886
https://doi.org/10.1063/5.0122886
Autor:
A. F. M. Anhar Uddin Bhuiyan, Zixuan Feng, Lingyu Meng, Andreas Fiedler, Hsien-Lien Huang, Adam T. Neal, Erich Steinbrunner, Shin Mou, Jinwoo Hwang, Siddharth Rajan, Hongping Zhao
Publikováno v:
Journal of Applied Physics. 131:145301
In this work, the structural and electrical properties of metalorganic chemical vapor deposited Si-doped β-(AlxGa1−x)2O3 thin films grown on (010) β-Ga2O3 substrates are investigated as a function of Al composition. The room temperature Hall mobi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e86891956370f58f618571f079c77e4f
https://doi.org/10.1063/5.0084062
https://doi.org/10.1063/5.0084062