Zobrazeno 1 - 10 of 17 pro vyhledávání: '"Andrea Troian"'
1
Akademický článek
Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide
Autor: Rainer Timm, Ashley R. Head, Sofie Yngman, Johan V. Knutsson, Martin Hjort, Sarah R. McKibbin, Andrea Troian, Olof Persson, Samuli Urpelainen, Jan Knudsen, Joachim Schnadt, Anders Mikkelsen
Publikováno v: Nature Communications, Vol 9, Iss 1, Pp 1-9 (2018)
Atomic layer deposition of high-quality thin oxide layers is crucial for many modern semiconductor electronic devices. Here, the authors explore the surface chemistry during the initial deposition and observe a previously unknown two-step process, wi
Externí odkaz: https://doaj.org/article/a09ceeac62c14ef0b15f85073d70ab40
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2
Akademický článek
InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer deposition
Autor: Andrea Troian, Johan V. Knutsson, Sarah R. McKibbin, Sofie Yngman, Aein S. Babadi, Lars-Erik Wernersson, Anders Mikkelsen, Rainer Timm
Publikováno v: AIP Advances, Vol 8, Iss 12, Pp 125227-125227-8 (2018)
Defects at the interface between InAs and a native or high permittivity oxide layer are one of the main challenges for realizing III-V semiconductor based metal oxide semiconductor structures with superior device performance. Here we passivate the In
Externí odkaz: https://doaj.org/article/f5826e7ec9214ecaab1bc10e1d49d575
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5
Atomic Layer Deposition of Hafnium Oxide on InAs: Insight from Time-Resolved in Situ Studies
Autor: Tamires Gallo, Rainer Timm, Erik Lind, Giulio D'Acunto, Esko Kokkonen, Yen Po Liu, Joachim Schnadt, Sofie Yngman, Foqia Rehman, Sarah R. McKibbin, Andrea Troian, Zhihua Yong
Publikováno v: ACS Applied Electronic Materials. 2:3915-3922
III-V semiconductors, such as InAs, with an ultrathin high-κ oxide layer have attracted a lot of interests in recent years as potential next-generation metal-oxide-semiconductor field-effect transistors, with increased speed and reduced power consum
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ffc3784ee556a9c982b27725aa19010b
https://doi.org/10.1021/acsaelm.0c00775
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6
Nanoscale mapping of carrier collection in single nanowire solar cells using X-ray beam induced current
Autor: Susanna Hammarberg, Magnus T. Borgström, Lert Chayanun, Gaute Otnes, Damien Salomon, Jesper Wallentin, Andrea Troian
Publikováno v: 'Journal of Synchrotron Radiation ', vol: 26, pages: 102-108 (2019)
Journal of Synchrotron Radiation
Nanofocused X-ray beam induced current (XBIC) is used to quantitatively map the spatially dependent carrier collection probability within single nanowires.
Here it is demonstrated how nanofocused X-ray beam induced current (XBIC) can be used to
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6d4bf41554d7d6c951a5123e6a8fc4c1
https://epn-library.esrf.fr/flora/jsp/index_view_direct_anonymous.jsp?record=doc:PUB_ESRF:53533
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8
Operando Surface Characterization of InP Nanowire p-n Junctions
Autor: Johan Knutsson, Andrea Troian, Matteo Amati, Anders Mikkelsen, James L. Webb, Rainer Timm, Sarah R. McKibbin, Luca Gregoratti, Hikmet Sezen, Jovana Colvin, Gaute Otnes, Magnus T. Borgström, Kai Dirscherl
Publikováno v: Nano Letters
We present an in-depth analysis of the surface band alignment and local potential distribution of InP nanowires containing a p-n junction using scanning probe and photoelectron microscopy techniques. The depletion region is localized to a 15 nm thin
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a103c03e9bfe0dd837b604fb4bae546b
https://pubmed.ncbi.nlm.nih.gov/31891513
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9
Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide
Autor: Sarah R. McKibbin, Rainer Timm, Johan Knutsson, Andrea Troian, Samuli Urpelainen, Anders Mikkelsen, Olof Persson, Jan Knudsen, Ashley R. Head, Martin Hjort, Joachim Schnadt, Sofie Yngman
Publikováno v: Nature Communications, Vol 9, Iss 1, Pp 1-9 (2018)
Nature Communications
Atomic layer deposition (ALD) enables the ultrathin high-quality oxide layers that are central to all modern metal-oxide-semiconductor circuits. Crucial to achieving superior device performance are the chemical reactions during the first deposition c
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e4304e9b7534cf36c5530b2f80eff5ad
http://link.springer.com/article/10.1038/s41467-018-03855-z
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10
Nanobeam X-ray Fluorescence Dopant Mapping Reveals Dynamics of in Situ Zn-Doping in Nanowires
Autor: Jesper Wallentin, Andrea Troian, Susanna Hammarberg, Vilgailė Dagytė, Zeng Xulu, Rainer Timm, Damien Salomon, Magnus T. Borgström, Lert Chayanun, Anders Mikkelsen, Gaute Otnes
Publikováno v: Nano Letters
Nano Letters, American Chemical Society, 2018, 18 (10), pp.6461-6468. ⟨10.1021/acs.nanolett.8b02957⟩
'Nano Letters ', vol: 18, pages: 6461-6468 (2018)
International audience; The properties of semiconductors can be controlled using doping, making it essential for electronic and optoelectronic devices. However, with shrinking device sizes it becomes increasingly difficult to quantify doping with suf
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b3487d58043d1c2e58ae2802d39e0d58
https://hal.archives-ouvertes.fr/hal-02976305
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