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Publikováno v:
Microelectronics Reliability. 52:2064-2067
High density capacitors Metal–Insulator–Metal (MIM) are often built with a thin oxide layer having a high dielectric constant. The failure mechanisms involving capacitors weakness can be caused by dielectric oxide crack. To identify a micro-crack
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::834cc8289c5c939f8351d8faba2f8cb7
https://doi.org/10.1016/j.microrel.2012.06.128
https://doi.org/10.1016/j.microrel.2012.06.128
