Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Andrea Favaron"'
Autor:
Mark Laws, Charlotte Hind, Andrea Favaron, Shirin Jamshidi, Bonnie Evans, Melanie Clifford, J. Mark Sutton, Khondaker Miraz Rahman
Publikováno v:
ACS Omega, Vol 5, Iss 21, Pp 11923-11934 (2020)
Externí odkaz:
https://doaj.org/article/dc7c8a3e0fbd4617842d4d7aec27052c
Autor:
Khondaker M. Rahman, Andrea Favaron, Shirin Jamshidi, Melanie Clifford, Mark Laws, Charlotte K. Hind, J. Mark Sutton, Bonnie Evans
Publikováno v:
Laws, M, Hind, C K, Favoran, A, Jamshidi, S, Evans, B, Clifford, M, Mark Sutton, J & Rahman, M 2020, ' N1-Benzofused Modification of Fluoroquinolones Reduces Activity Against Gram-Negative Bacteria ', ACS Omega, vol. 5, no. 21, acsomega.9b03910, pp. 11923–11934 . https://doi.org/10.1021/acsomega.9b03910
ACS Omega, Vol 5, Iss 21, Pp 11923-11934 (2020)
ACS Omega
ACS Omega, Vol 5, Iss 21, Pp 11923-11934 (2020)
ACS Omega
The fluoroquinolone class of antibiotics has a well-established structure-activity relationship (SAR) and a long history in the clinic, but the effect of electron-rich benzofused substituents at the N1 position remains poorly explored. Because groups
Autor:
Helmut Brech, Matteo Meneghini, S. Lavanga, Gaudenzio Meneghesso, Isabella Rossetto, Enrico Zanoni, A. Barbato, Andrea Favaron, Haifeng Sun, Marco Silvestri
Publikováno v:
IEEE Transactions on Electron Devices. 64:1032-1037
This paper demonstrates that—for high-electric fields and drain current levels—the electroluminescence (EL) versus VGS curves of GaN-on-Si radio frequency HEMTs significantly deviate from the well-known bell-shape, due to the turn-on of a seconda
Autor:
Mark Laws, Charlotte Hind, Andrea Favaron, Shirin Jamshidi, J Mark Sutton, Khondaker Miraz Rahman
The fluoroquinolone class of antibiotics have a well-established structure-activity relationship (SAR) and a long history in the clinic, but the effect of electron-rich benzofused substituents at the N1 position remains poorly explored. Groups at thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1c4cd1ab189fb09e171b464f590370ed
https://doi.org/10.26434/chemrxiv.10311686.v1
https://doi.org/10.26434/chemrxiv.10311686.v1
Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis
Autor:
Marleen Van Hove, Niels Posthuma, Tian-Li Wu, Maria Ruzzarin, Matteo Meneghini, Andrea Favaron, Enrico Zanoni, Vanessa Rizzato, Gaudenzio Meneghesso, Denis Marcon, Isabella Rossetto, Stefaan Decoutere, Steve Stoffels
This paper investigates the robustness of normally-off High Electron Mobility Transistors (HEMTs) with p-GaN gate submitted to forward gate bias overstress. By means of combined DC and spectral analysis we demonstrate the following results: (i) the d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d7198fb77c21830063ddd42ae668e70e
http://hdl.handle.net/11577/3223824
http://hdl.handle.net/11577/3223824