Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Andrea Bortoletto"'
Autor:
Gaudenzio Meneghesso, Massimo Maretto, Giovanni Massari, Andrea Bortoletto, Enrico Zanoni, D. Buttari
Publikováno v:
Scopus-Elsevier
The BVDS–ID breakdown characteristics of MESFET and HEMT devices measured at constant gate current are correlated with conventional measurements of gate current due to impact-ionization. The influence of thermal effects on breakdown DC measurements
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d53e331ef8d940e4602c41670436bab
https://doi.org/10.1016/s0026-2714(99)00182-1
https://doi.org/10.1016/s0026-2714(99)00182-1
