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Autor:
A. Pantellini, Antonio Nanni, Donatella Dominijanni, Claudio Lanzieri, Andrea Bettidi, D. Carosi
Publikováno v:
2015 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC).
AlGaN/GaN high electron mobility transistors (HEMTs) have attracted considerable attention on high power - high frequency switch applications. With the aim to optimize the switching performances, in this paper the comparison between traditional Schot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f2ca9f4669dff86966e08c089aa7b06
https://doi.org/10.1109/inmmic.2015.7330381
https://doi.org/10.1109/inmmic.2015.7330381
