Zobrazeno 1 - 10
of 114
pro vyhledávání: '"Andrea Bertoni"'
Publikováno v:
Physical Review Research, Vol 5, Iss 4, p 043159 (2023)
Hole-spin qubits in semiconductors represent a mature platform for quantum technological applications. Here we consider their use as quantum sensors, and specifically for inferring the presence and estimating the distance from the qubit of a remote c
Externí odkaz:
https://doaj.org/article/f1c068d8da0943878b9760783ae6f540
Autor:
Lee Aspitarte, Daniel R. McCulley, Andrea Bertoni, Joshua O. Island, Marvin Ostermann, Massimo Rontani, Gary A. Steele, Ethan D. Minot
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
Abstract Carbon nanotubes (CNTs) are a promising material for high-performance electronics beyond silicon. But unlike silicon, the nature of the transport band gap in CNTs is not fully understood. The transport gap in CNTs is predicted to be strongly
Externí odkaz:
https://doaj.org/article/de24daa75b0240c586ffac825a717848
Autor:
Devashish Pandey, Laura Bellentani, Matteo Villani, Guillermo Albareda, Paolo Bordone, Andrea Bertoni, Xavier Oriols
Publikováno v:
Applied Sciences, Vol 9, Iss 11, p 2300 (2019)
Measuring properties of quantum systems is governed by a stochastic (collapse or state-reduction) law that unavoidably yields an uncertainty (variance) associated with the corresponding mean values. This non-classical source of uncertainty is known t
Externí odkaz:
https://doaj.org/article/52dd4faf41d642969170bde2465acb47
Autor:
Andrea Bertoni, Andrea Maffia
Publikováno v:
International Journal of Mathematical Education in Science and Technology. :1-11
Publikováno v:
Physical Review B. 106
Graphene nanoribbons provide an ideal platform for electronic interferometry in the Integer Quantum Hall regime. Here, we solve the time-dependent four-component Schroedinger equation for single carriers in graphene and expose several dynamical effec
We investigate the electronic band structure of modulation-doped GaAs/AlGaAs core-shell nanowires for both n- and p-doping. We developed an 8-band Burt-Foreman k.p Hamiltonian approach to describe coupled conduction and valence bands in heterostructu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::77ebdddf12eb8a46ea2e8a41642642c5
http://arxiv.org/abs/2202.01572
http://arxiv.org/abs/2202.01572
Publikováno v:
Physical Review B
Physical Review B 104 (2021): 035302-1–035302-15. doi:10.1103/PhysRevB.104.035302
info:cnr-pdr/source/autori:Secchi A.; Bellentani L.; Bertoni A.; Troiani F./titolo:Interacting holes in Si and Ge double quantum dots: From a multiband approach to an effective-spin picture/doi:10.1103%2FPhysRevB.104.035302/rivista:Physical Review B/anno:2021/pagina_da:035302-1/pagina_a:035302-15/intervallo_pagine:035302-1–035302-15/volume:104
Physical Review B 104 (2021): 035302-1–035302-15. doi:10.1103/PhysRevB.104.035302
info:cnr-pdr/source/autori:Secchi A.; Bellentani L.; Bertoni A.; Troiani F./titolo:Interacting holes in Si and Ge double quantum dots: From a multiband approach to an effective-spin picture/doi:10.1103%2FPhysRevB.104.035302/rivista:Physical Review B/anno:2021/pagina_da:035302-1/pagina_a:035302-15/intervallo_pagine:035302-1–035302-15/volume:104
The states of two electrons in tunnel-coupled semiconductor quantum dots can be effectively described in terms of a two-spin Hamiltonian with an isotropic Heisenberg interaction. A similar description needs to be generalized in the case of holes due
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::81adaa0fd69a21263c20463e3f742755
http://arxiv.org/abs/2104.07730
http://arxiv.org/abs/2104.07730
Publikováno v:
Physical Review B
Physical Review B 104 (2021): 205409-1–205409-20. doi:10.1103/PhysRevB.104.205409
info:cnr-pdr/source/autori:Secchi A.; Bellentani L.; Bertoni A.; Troiani F./titolo:Inter-And intraband Coulomb interactions between holes in silicon nanostructures/doi:10.1103%2FPhysRevB.104.205409/rivista:Physical Review B/anno:2021/pagina_da:205409-1/pagina_a:205409-20/intervallo_pagine:205409-1–205409-20/volume:104
Physical Review B 104 (2021): 205409-1–205409-20. doi:10.1103/PhysRevB.104.205409
info:cnr-pdr/source/autori:Secchi A.; Bellentani L.; Bertoni A.; Troiani F./titolo:Inter-And intraband Coulomb interactions between holes in silicon nanostructures/doi:10.1103%2FPhysRevB.104.205409/rivista:Physical Review B/anno:2021/pagina_da:205409-1/pagina_a:205409-20/intervallo_pagine:205409-1–205409-20/volume:104
We present a full derivation of the interaction Hamiltonian for holes in silicon within the six-band envelope-function scheme, which appropriately describes the valence band close to the $\boldsymbol{\Gamma}$ point. The full structure of the single-h
Publikováno v:
Physical Review B 103 (2021): 085434-1–085434-12. doi:10.1103/PhysRevB.103.085434
info:cnr-pdr/source/autori:Wojcik P.; Bertoni A.; Goldoni G./titolo:Anisotropy of the spin-orbit coupling driven by a magnetic field in InAs nanowires/doi:10.1103%2FPhysRevB.103.085434/rivista:Physical Review B/anno:2021/pagina_da:085434-1/pagina_a:085434-12/intervallo_pagine:085434-1–085434-12/volume:103
info:cnr-pdr/source/autori:Wojcik P.; Bertoni A.; Goldoni G./titolo:Anisotropy of the spin-orbit coupling driven by a magnetic field in InAs nanowires/doi:10.1103%2FPhysRevB.103.085434/rivista:Physical Review B/anno:2021/pagina_da:085434-1/pagina_a:085434-12/intervallo_pagine:085434-1–085434-12/volume:103
We use the $\mathbf{k} \cdot \mathbf{p}$ theory and the envelope function approach to evaluate the Rashba spin-orbit coupling induced in a semiconductor nanowire by a magnetic field at different orientations, taking explicitely into account the prism
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1cbd131421c08f1b6e43fa0ccb68a482
https://hdl.handle.net/11380/1239460
https://hdl.handle.net/11380/1239460
Publikováno v:
Nano letters (Online) 20 (2020): 433–440. doi:10.1021/acs.nanolett.9b04151
info:cnr-pdr/source/autori:McCulley D.R.; Senger M.J.; Bertoni A.; Perebeinos V.; Minot E.D./titolo:Extremely Efficient Photocurrent Generation in Carbon Nanotube Photodiodes Enabled by a Strong Axial Electric Field/doi:10.1021%2Facs.nanolett.9b04151/rivista:Nano letters (Online)/anno:2020/pagina_da:433/pagina_a:440/intervallo_pagine:433–440/volume:20
info:cnr-pdr/source/autori:McCulley D.R.; Senger M.J.; Bertoni A.; Perebeinos V.; Minot E.D./titolo:Extremely Efficient Photocurrent Generation in Carbon Nanotube Photodiodes Enabled by a Strong Axial Electric Field/doi:10.1021%2Facs.nanolett.9b04151/rivista:Nano letters (Online)/anno:2020/pagina_da:433/pagina_a:440/intervallo_pagine:433–440/volume:20
Carbon nanotube (CNT) photodiodes have the potential to convert light into electrical current with high efficiency. However, previous experiments have revealed the photocurrent quantum yield (PCQY) to be well below 100%. In this work, we show that th