Zobrazeno 1 - 10
of 47
pro vyhledávání: '"Andrea, Gerbi"'
Colloidal probe Atomic Force Microscopy (AFM) allows to explore sliding friction phenomena in graphite contacts of nominal lateral size up to hundreds of nanometers. It is known that contact formation involves tribo-induced material transfer of graph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7aad28069122a1b265a58278491f4e90
http://arxiv.org/abs/2210.01211
http://arxiv.org/abs/2210.01211
Publikováno v:
Applied Surface Science. 609:155218
We develop a phase-space ab-initio formalism to compute Ballistic Electron Emission Spectroscopy current-voltage I(V)'s in a metal-semiconductor interface. We consider injection of electrons into the conduction band for direct bias ($V>0$) and inject
Autor:
Carolina A, Marques, Luke C, Rhodes, Rosalba, Fittipaldi, Veronica, Granata, Chi Ming, Yim, Renato, Buzio, Andrea, Gerbi, Antonio, Vecchione, Andreas W, Rost, Peter, Wahl
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 33(32)
In strongly correlated electron materials, the electronic, spin, and charge degrees of freedom are closely intertwined. This often leads to the stabilization of emergent orders that are highly sensitive to external physical stimuli promising opportun
Publikováno v:
Carbon
Colloidal probe Atomic Force Microscopy (AFM) allows to explore sliding states of vanishing friction, i.e. superlubricity, in mesoscopic graphite contacts. In this respect, superlubricity is known to appear upon formation of a triboinduced transfer l
Autor:
Sergio Di Matteo, Nicola Manca, César González, Andrea Gerbi, L. D. Bell, Mirko Prato, Fernando Flores, Daniele Marré, Renato Buzio, Sergio Marras, Pedro L. de Andrés
Publikováno v:
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces, 2020, 12 (25), pp.28894-28902. ⟨10.1021/acsami.0c07252⟩
ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2020, 12 (25), pp.28894-28902. ⟨10.1021/acsami.0c07252⟩
ACS Applied Materials & Interfaces, 2020, 12 (25), pp.28894-28902. ⟨10.1021/acsami.0c07252⟩
ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2020, 12 (25), pp.28894-28902. ⟨10.1021/acsami.0c07252⟩
International audience; Macroscopic current-voltage measurements and nanoscopic ballistic electron emission spectroscopy (BEES) have been used to probe the Schottky barrier height (SBH) at metal/Ge(100) junctions for two metal electrodes (Au and Pt)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::92f77555c68ef169a74b28b093be788b
https://hal.science/hal-02928291
https://hal.science/hal-02928291
Autor:
C. A. Marques, Luke C. Rhodes, Rosalba Fittipaldi, Peter Wahl, Renato Buzio, Veronica Granata, Antonio Vecchione, Chi Ming Yim, Andrea Gerbi, Andreas W. Rost
In strongly correlated electron materials, the electronic, spin, and charge degrees of freedom are closely intertwined. This often leads to the stabilization of emergent orders that are highly sensitive to external physical stimuli promising opportun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e83079df6c763f7e8dea1f9372358c6e
Publikováno v:
Langmuir. 34:3207-3214
We report high-resolution surface morphology and friction force maps of polycrystalline organic thin films derived by deposition of the n-type perylene diimide semiconductor PDI8-CN2. We show that the in-plane molecular arrangement into ordered, cofa
Autor:
Andreas W. Rost, C. A. Marques, Antonio Vecchione, Rosalba Fittipaldi, Peter Wahl, Chi Ming Yim, Luke C. Rhodes, Veronica Granata, Andrea Gerbi, Renato Buzio
Publikováno v:
Advanced Materials. 33:2170253
Autor:
Yuan Qin, Shibing Long, Wenxiang Mu, Guangwei Xu, Renato Buzio, Zhitai Jia, Qiming He, Xutang Tao, Andrea Gerbi
Publikováno v:
Advanced Electronic Materials. 6:1901151
Autor:
César González, P. L. de Andres, Daniele Marré, Daniel G. Trabada, F. Flores, L. D. Bell, Andrea Gerbi, Renato Buzio, Nicola Manca, S. Di Matteo
Publikováno v:
Physical Review B
Physical Review B, American Physical Society, 2018, 98 (20), pp.205416. ⟨10.1103/PhysRevB.98.205416⟩
Physical Review B, 2018, 98 (20), pp.205416. ⟨10.1103/PhysRevB.98.205416⟩
Physical Review B, American Physical Society, 2018, 98 (20), pp.205416. ⟨10.1103/PhysRevB.98.205416⟩
Physical Review B, 2018, 98 (20), pp.205416. ⟨10.1103/PhysRevB.98.205416⟩
Ab initio nonequilibrium Keldysh formalism based on an $N$-order renormalization technique is used to compute $I(V)$ ballistic electron emission microscopy characteristics at the Au/Ge(001) interface. Such a formalism quantitatively reproduces precis