Zobrazeno 1 - 10
of 71
pro vyhledávání: '"Andre Touboul"'
Autor:
J.-R. Vaille, Andre Touboul, Frédéric Saigné, S. Bourdarie, A. Privat, G. Chaumont, A. Michez, Richard Arinero, Frédéric Wrobel, N. Chatry, Eric Lorfevre
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2013, 60 (6), pp.4166-4174. ⟨10.1109/TNS.2013.2287974⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2013, 60 (6), pp.4166-4174. ⟨10.1109/TNS.2013.2287974⟩
Electrical characterizations are used to understand power MOSFETs failure mechanisms after heavy ion irradiation. Results indicate that both bias levels and impact localization of heavy ion are important parameters for SEGR triggering or latent defec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::17319218fcb7a5f5fd2baf465a4c9922
https://doi.org/10.1109/tns.2013.2287974
https://doi.org/10.1109/tns.2013.2287974
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2011, 58 (6), pp.2748-2754. ⟨10.1109/TNS.2011.2172631⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2011, 58 (6), pp.2748-2754. ⟨10.1109/TNS.2011.2172631⟩
Based on experimental results under neutron beam and on analysis using Monte Carlo simulation, we show that the sensitivity to SEB/SEL of Trench Gate Fieldstop IGBT can be modeled by an RPP assumption. The minimum critical charge for triggering a des
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::047353fbf79ac9a81e70d9ee8cc82b24
https://doi.org/10.1109/tns.2011.2172631
https://doi.org/10.1109/tns.2011.2172631
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2011, 58 (6), pp.2793-2797. ⟨10.1109/TNS.2011.2172954⟩
IEEE Transactions on Nuclear Science, 2011, 58 (6), pp.2793-2797. ⟨10.1109/TNS.2011.2172954⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2011, 58 (6), pp.2793-2797. ⟨10.1109/TNS.2011.2172954⟩
IEEE Transactions on Nuclear Science, 2011, 58 (6), pp.2793-2797. ⟨10.1109/TNS.2011.2172954⟩
Alpha particles are one of the main sources of soft errors at ground level due to radioactive impurities found in electronic materials. In this paper, based on the radioactive decay laws, we identify radioactive nuclides that may enhance the alpha di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::965c41306c694c992de7b0dda20aeabf
https://doi.org/10.1109/tns.2011.2172954
https://doi.org/10.1109/tns.2011.2172954
Autor:
Philippe Cocquerez, B. Azais, Andre Touboul, Luigi Dilillo, J.L. Autran, M Lacourty, P Rech, C. Chatry, Frédéric Wrobel, Pierre Chadoutaud, Thien Lam-Trong, J.-R. Vaille, F. Saigne, Jean-Marc Galliere, F Laplanche, Denis Pantel
Publikováno v:
IEEE Transactions on Nuclear Science. 58:945-951
We report a stratospheric flight with a CNES balloon for which we developed a silicon detector in order to obtain data on the atmospheric radiation environment. The number of detected protons is shown to be directly correlated with the altitude. Simu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60814d777be9401fc716297cdd78a4a1
https://doi.org/10.1109/tns.2011.2136359
https://doi.org/10.1109/tns.2011.2136359
Autor:
Andre Touboul, Gaudenzio Meneghesso, Anna Cavallini, Nathalie Labat, Mustapha Faqir, F. Danesin, Giovanni Verzellesi, Fausto Fantini, Enrico Zanoni, Antonio Castaldini, Fabiana Rampazzo, Christian Dua
Publikováno v:
Microelectronics Reliability. 47:1639-1642
Traps are characterized in AlGaN–GaN HEMTs by means of DLTS techniques and the associated charge/discharge behavior is interpreted with the aid of numerical device simulations. Under specific bias conditions, buffer traps can produce “false” su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::068de8f96c6755c1db67d471ea30433a
https://doi.org/10.1016/j.microrel.2007.07.005
https://doi.org/10.1016/j.microrel.2007.07.005
Autor:
Christian Dua, Alberto Sozza, Nathalie Labat, Arnaud Curutchet, Nathalie Malbert, Andre Touboul
Publikováno v:
Microelectronics Reliability. 46:1725-1730
Although impressive results have been published for GaN-based transistors in a large frequency range reliability demonstration is becoming an important subject of concern. In this article the conditions of a long term DC life test is presented and a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81073e55030d5e1bb9d29b12d44da8dd
https://doi.org/10.1016/j.microrel.2006.07.062
https://doi.org/10.1016/j.microrel.2006.07.062
Publikováno v:
physica status solidi c. 3:499-503
We present a comparison of the breakdown loci of a MESFET, PHEMT and Power PHEMT. It is based on the study of the correlation between breakdown loci and device output characteristics. This study aims at performing a technology choice for amplifier de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ad1d6f07152b9466e63262ba1802860
https://doi.org/10.1002/pssc.200564168
https://doi.org/10.1002/pssc.200564168
Autor:
Philippe Perdu, Vincent Pouget, Nicolas Guitard, Andre Touboul, David Trémouilles, Dean Lewis, Nicolas Nolhier, F. Essely, Marise Bafleur
Publikováno v:
Microelectronics Reliability. 45:1415-1420
The failure signatures of a grounded-base NPN bipolar ESD protection under multiple TLP and HBM stresses are analyzed. For this particular device having a graded collector region, multiple TLP or HBM stresses result in different types of defects. OBI
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd2ca853dd2a9928753f0616055a9c03
https://doi.org/10.1016/j.microrel.2005.07.030
https://doi.org/10.1016/j.microrel.2005.07.030
Publikováno v:
Solid-State Electronics. 49:956-964
This work describes a procedure to implement a two-dimensional hydrodynamic simulation of InP/GaAs 0.51 Sb 0.49 /InP double heterojunction bipolar transistor (DHBT). It concerns the DC characteristics and allows to fit some very sensitive but still u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0659da8c053338af693dbcf63db36aa2
https://doi.org/10.1016/j.sse.2005.03.007
https://doi.org/10.1016/j.sse.2005.03.007
Autor:
A. Minko, Christophe Gaquiere, Nathalie Labat, Nathalie Malbert, Arnaud Curutchet, Andre Touboul
Publikováno v:
Fluctuation and Noise Letters. :L319-L328
This paper deals with the analysis of the low frequency drain current noise in gallium nitride FET on silicon substrate. The drain current noise is compared for devices with gate length of 1.5μm and 3.5μm. We discuss two types of noise mechanisms b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9061ae55034c10a0ea4ab758c928fcca
https://doi.org/10.1142/s0219477504001926
https://doi.org/10.1142/s0219477504001926