Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Andre Lange"'
Publikováno v:
2022 IEEE International Integrated Reliability Workshop (IIRW).
Publikováno v:
2021 International Semiconductor Conference (CAS).
The demands on modern electronics are constantly increasing. In the field of power electronics, the semiconductor material gallium arsenide (GaAs) is gaining more and more popularity. In this work, a first GaAs PIN Diode for 900 V operation is under
Publikováno v:
2021 IEEE International Integrated Reliability Workshop (IIRW).
Publikováno v:
ESSDERC
The degradation of integrated field effect transistors (FETs) is an increasingly critical effect for electronic systems and their product lifetimes. To allow reliability investigations during integrated circuit (IC) design already, multiple electroni
Autor:
Asen Asenov, Andre Lange, Binjie Cheng, Roland Jancke, Christoph Sohrmann, Ulf Schlichtmann, Joachim Haase
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 35:197-210
Process variations and atomic-level fluctuations increasingly pose challenges to the design and analysis of integrated circuits by introducing variability. Although several approaches have been proposed to deal with the inherent statistical nature of
Autor:
S. Schlipf, G. Kurz, A. Aal, Ehrenfried Zschech, Roland Jancke, Martin Gall, André Clausner, Jens Paul, J. Warmuth, Andre Lange, K.-U. Giering, M. Otto
Publikováno v:
ESSDERC
On the example of a 28nm SRAM array, this work presents a novel reliability study which takes into account the effect of externally applied mechanical stress in circuit simulations. This method is able to predict the bit failures caused by the stress
Autor:
J. Warmuth, G. Kurz, Rüdiger Rosenkranz, K.-U. Giering, A. Aal, Roland Jancke, S. Schlipf, M. Otto, Martin Gall, Andre Lange, Ehrenfried Zschech, André Clausner, Jens Paul
Publikováno v:
IRPS
28 nm high-k metal gate CMOS SRAM circuits were subjected to controlled mechanical load by nanoindentation. A thinning procedure down to about 35 μm of remaining Si enables high stress fields in the vicinity of operational SRAM cells which were embe
Autor:
Joachim Haase, Andre Lange
Publikováno v:
IFAC-PapersOnLine. 48:556-561
There exist several problems where only a frequency-domain characteristic is given, for instance the description of the terminal behaviour by frequency-dependent parameters, and where we are only interested in the results of a small-signal frequency-
Publikováno v:
2016 IEEE International Integrated Reliability Workshop (IIRW).
We present a BTI compact model that is able to account for the complex BTI stress patterns encountered in complex electronic circuits. Such stress patterns are composed of various blocks corresponding to different circuit operation states, protocol m