Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Andre L. Perin"'
Autor:
A. S. N. Pereira, Renato Giacomini, Joao Antonio Martino, Paula Ghedini Der Agopian, Andre L. Perin
Publikováno v:
CIÊNCIAVITAE
Scopus-Elsevier
Scopus-Elsevier
In this work, a simple model that accounts for the variation of electron mobility as a function of the silicondielectric interface crystallographic orientation is presented. Simulations were conducted in order to compute the effective mobility of pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e3ce02660f803f4728ce718fb3f0355a
https://doi.org/10.29292/jics.v7i2.361
https://doi.org/10.29292/jics.v7i2.361
Publikováno v:
Biblioteca Digital de Teses e Dissertações da FEI
Centro Universitário da Fundação Educacional Inaciana (FEI)
instacron:FEI
Centro Universitário da Fundação Educacional Inaciana (FEI)
instacron:FEI
This paper addresses a quantitative study of the reliability improvement of the stacked transistor structure. The susceptibility of integrated circuits to single-event effects caused by interaction with ionizing particles is analyzed at the semicondu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::26c47ea0f3196154e327a24a3eb80dff
https://doi.org/10.1109/tdmr.2019.2912862
https://doi.org/10.1109/tdmr.2019.2912862
Publikováno v:
2017 2nd International Symposium on Instrumentation Systems, Circuits and Transducers (INSCIT).
This work proposes and describes in details a complete setup solution for testing of non-encapsulated electronic devices under mechanical stress. The equipment was implemented and calibrated to later use in electrical characterization of devices, suc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6abcf9d1b9a27be135ebeacdc89a44e6
https://doi.org/10.1109/inscit.2017.8103520
https://doi.org/10.1109/inscit.2017.8103520
Publikováno v:
2017 32nd Symposium on Microelectronics Technology and Devices (SBMicro).
The PIN sensor array in two technologies (bulk and SOI) is studied here, based on fabricated lateral PIN. Experimental data in non-radiation environment is used to adjust the models implemented in the numerical simulator that are latter used to evalu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e8bb63712050c91efe61c44cacaad81
https://doi.org/10.1109/sbmicro.2017.8113003
https://doi.org/10.1109/sbmicro.2017.8113003
Publikováno v:
2016 1st International Symposium on Instrumentation Systems, Circuits and Transducers (INSCIT).
This work proposes a complete equipment and setup solution for testing of non-encapsulated electronic devices under moderate magnetic fields. The equipment was implemented, tested and used to characterize three different MOS transistor topologies, es
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3400b10822b9a2f320b151f71c128aac
https://doi.org/10.1109/inscit.2016.7598196
https://doi.org/10.1109/inscit.2016.7598196
Autor:
Joao Antonio Martino, Paula Ghedini Der Agopian, A. S. N. Pereira, Renato Giacomini, Andre L. Perin
Publikováno v:
ECS Transactions. 39:179-186
In this work, we present a simple mobility model that takes into account the variation of the carrier's mobility according to crystallographic orientations of the silicon-dielectric interface. The effective mobility of simulated devices was compared
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6384019d598923c22a3c528b041cf766
https://doi.org/10.1149/1.3615192
https://doi.org/10.1149/1.3615192
Autor:
Andre L. Perin, Renato Giacomini
Publikováno v:
2012 IEEE International SOI Conference (SOI).
The best-explored integrated magnetic field sensors are built with planar IC technologies, which do not allow 3D sensing in standard fabrication processes due to their bi-dimensional nature. Unlike planar devices, FinFETs can be used to sense magneti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::114661d5642118fdab185bff3aee40d3
https://doi.org/10.1109/soi.2012.6404368
https://doi.org/10.1109/soi.2012.6404368