Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Andre Engelen"'
Autor:
Jan Mulkens, Hans Van Der Laan, Michael Kubis, Kaustuve Bhattacharyya, Hugo Augustinus Joseph Cramer, Andre Engelen, Jos Benschop, Paul Christiaan Hinnen
Publikováno v:
SPIE Proceedings.
The overlay, CDU and focus requirements for the 20nm node can only be met using a holistic lithography approach whereby full use is made of high-order, field-by-field, scanner correction capabilities. An essential element in this approach is a fast,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::045ae872964e43ed9989dbd98d468f5e
https://doi.org/10.1117/12.2011507
https://doi.org/10.1117/12.2011507
Autor:
Joost Bekaert, Dirk Jürgens, Gert Streutker, Wilfred Endendijk, J. Verbeeck, Robert John Socha, Andre Engelen, Bert van Drieenhuizen, Daniel Corliss, Melchior Mulder, Anita Bouma, Cas Johannes Petrus Maria Van Nuenen, Greg McIntyre, Bastian Trauter, Oscar Noordman, Joerg Zimmermann, Robert Kazinczi, Bart Laenens, Wim Bouman
Publikováno v:
SPIE Proceedings.
This paper describes the principle and performance of FlexRay, a fully programmable illuminator for high NA immersion systems. Sources can be generated on demand, by manipulating an array of mirrors instead of the traditional way of inserting optical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::156a83ca3e2ac3da0d5d3302a3f396f2
https://doi.org/10.1117/12.845984
https://doi.org/10.1117/12.845984
Autor:
Hyunjo Yang, Jinhyuck Jeon, Sangjin Oh, Donggyu Yim, Chanha Park, Joerg Zimmermann, Young-Hong Min, Andre Engelen, Jinyoung Choi, Cheol-Kyun Kim, Ki-Yeop Park, Bart Smeets, Sungki Park
Publikováno v:
SPIE Proceedings.
As K1 factor for mass-production of memory devices has been decreased to almost its theoretical limit, the process window of lithography is getting much smaller and the production yield has become more sensitive to even small variations of the proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44f8dd398be7d9b8117836dcea6e5548
https://doi.org/10.1117/12.846703
https://doi.org/10.1117/12.846703
Autor:
Dror Kasimov, Ingrid Minnaert-Janssen, Ilan Englard, Jo Finders, Frank Duray, Robert Kazinczi, Shmoolik Mangan, Amir Sagiv, Andre Engelen
Publikováno v:
SPIE Proceedings.
As the semiconductor industry moves to 3X technology nodes and below, holistic lithography source mask optimization (SMO) methodology targets an increase in the overall litho performance with improved process windows. The typical complexity of both m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6758f2f4587db62fa879768324d63d6
https://doi.org/10.1117/12.848376
https://doi.org/10.1117/12.848376
Autor:
Christoph Hennerkes, Manfred Maul, Jens Timo Neumann, Jörg Zimmermann, Sean Park, Joep de Vocht, Paul Gräupner, Michael Patra, Melchior Mulder, Oscar Noordman, Bernd Geh, Dirk Jürgens, Andre Engelen, Dirk Hellweg
Publikováno v:
SPIE Proceedings.
The application of customized and freeform illumination source shapes is a key enabler for continued shrink using 193 nm water based immersion lithography at the maximum possible NA of 1.35. In this paper we present the capabilities of the DOE based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f4932bc74e55b1768c513cf20e0a5be
https://doi.org/10.1117/12.847282
https://doi.org/10.1117/12.847282
Autor:
Melchior Mulder, Bert van Drieenhuizen, Stephen Hsu, Michael Patra, András G. Major, Dirk Jürgens, Keith Gronlund, Oscar Noordman, Johannes Eisenmenger, Markus Degünther, Robert Kazinczi, Gert Streutker, Andre Engelen
Publikováno v:
SPIE Proceedings.
This paper describes the principle and performance of a fully programmable illuminator for a high-NA immersion system. Sources can be generated on demand, by manipulating an array of mirrors instead of the traditional way of inserting optical element
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c21d3566eade6a24a218673676d0051
https://doi.org/10.1117/12.837035
https://doi.org/10.1117/12.837035
Autor:
Shmoolik Mangan, Jo Finders, Dror Kasimov, Amir Sagiv, Robert Kazinczi, Ingrid Minnaert-Janssen, Frank Duray, Andre Engelen, Ilan Englard
Publikováno v:
SPIE Proceedings.
As the semiconductor industry moved to 4X technology nodes and below, low-k 1 ArF lithography approached the theoretical limits of single patterning resolution, a regime typically plagued by marginally small process windows. In order to widen the pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29f15fc84bdb740d29679850bfd5fb26
https://doi.org/10.1117/12.832724
https://doi.org/10.1117/12.832724
Autor:
Frank Hartung, Robert Kazinczi, Scott Halle, Young O. Kim, Frank Rohmund, Jaione Tirapu-Azpiroz, Joerg Zimmermann, Geoffrey W. Burr, John A. Hoffnagle, Rene Carpaij, Joost Hageman, Daniel Corliss, Bernhard Kneer, Saeed Bagheri, Christoph Hennerkes, Carsten Russ, Michael S. Hibbs, Manfred Maul, Alfred Wagner, Donis G. Flagello, Greg McIntyre, Moutaz Fakhry, Tom Faure, Martin Burkhardt, Alan E. Rosenbluth, Kafai Lai, Andre Engelen, Kehan Tian, Remco Jochem Sebastiaan Groenendijk, Emily Gallagher, David O. S. Melville
Publikováno v:
SPIE Proceedings.
We demonstrate experimentally for the first time the feasibility of applying SMO technology using pixelated illumination. Wafer images of SRAM contact holes were obtained to confirm the feasibility of using SMO for 22nm node lithography. There are st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fce3aad081efaf57fa2ff563aa36102
https://doi.org/10.1117/12.814680
https://doi.org/10.1117/12.814680
Autor:
Steve Hansen, Igor Bouchoms, Melchior Mulder, Jörg Zimmermann, Anthony Ngai, Marieke van Veen, Anita Bouma, Andre Engelen
Publikováno v:
SPIE Proceedings.
The practical limit of NA using water as immersion liquid has been reached. As a consequence, the k1 in production for the coming technology nodes will decrease rapidly, even below k1=0.25.This means that new imaging solutions are required. Double pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07cfaf12daa434f3440a65e83f7d781a
https://doi.org/10.1117/12.814155
https://doi.org/10.1117/12.814155
Autor:
Jan Mulkens, Richard Moerman, Roelof de Graaf, Herman Boom, Patrick Thomassen, Paul Liebregts, Frank Bernhard Sperling, Marieke van Veen, Igor Bouchoms, Andre Engelen, Wolfgang Emer
Publikováno v:
SPIE Proceedings.
Immersion lithography started to become the main workhorse for volume production of 45-nm devices, and while waiting for EUV lithography, immersion will continue to be the main technology for further shrinks. In a first step single exposure can be st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2caf32fc1262769adaa00faa38de7a01
https://doi.org/10.1117/12.813649
https://doi.org/10.1117/12.813649