Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Andre Budrevich"'
Autor:
Wilfried Vandervorst, Andre Budrevich
Publikováno v:
Metrology and Diagnostic Techniques for Nanoelectronics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77830852393ab19284246d0009de609a
https://doi.org/10.1201/9781315185385-7
https://doi.org/10.1201/9781315185385-7
Autor:
Ebrahim Andideh, Harold W. Kennel, Barbara Miner, Florian Gstrein, Andre Budrevich, John J. Plombon
Publikováno v:
MRS Proceedings. 1079
The diffusion of aluminum (Al) from a source sandwiched between polycrystalline copper (Cu) thin films was investigated as a function of time and temperature through secondary ion mass spectroscopy (SIMS) and continuum simulations. Extracted diffusio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0e39eb8a8908697090516d6399fa249
https://doi.org/10.1557/proc-1079-n04-06
https://doi.org/10.1557/proc-1079-n04-06
Publikováno v:
AIP Conference Proceedings.
The production of Ultra Shallow Junctions (USJ) in silicon devices requires controlling the Transient Enhanced Diffusion (TED) of electrical dopants. USJ development has focused on boron because hole mobility is lower than electron mobility in silico
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7541915c8f94946e92aad3b9436cabd
https://doi.org/10.1063/1.2401457
https://doi.org/10.1063/1.2401457
Autor:
Jerry Hunter, Andre Budrevich
Publikováno v:
The 1998 international conference on characterization and metrology for ULSI technology.
As the semiconductor industry roadmap passes through the 0.1 μm technology node, the junction depth of the transistor source/drain extension will be required to be less than 20 nm and the well doping will be near 1.0 μm in depth. The development of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::746eb68ad6942102449d104f232e6b45
https://doi.org/10.1063/1.56792
https://doi.org/10.1063/1.56792
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