Zobrazeno 1 - 10
of 163
pro vyhledávání: '"André Strittmatter"'
Autor:
Paweł Holewa, Marek Burakowski, Anna Musiał, Nicole Srocka, David Quandt, André Strittmatter, Sven Rodt, Stephan Reitzenstein, Grzegorz Sęk
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
Abstract Single-photon sources are key building blocks in most of the emerging secure telecommunication and quantum information processing schemes. Semiconductor quantum dots (QD) have been proven to be the most prospective candidates. However, their
Externí odkaz:
https://doaj.org/article/472899499457479ba2de6becf0443ad9
Autor:
Martin von Helversen, Jonas Böhm, Marco Schmidt, Manuel Gschrey, Jan-Hindrik Schulze, André Strittmatter, Sven Rodt, Jörn Beyer, Tobias Heindel, Stephan Reitzenstein
Publikováno v:
New Journal of Physics, Vol 21, Iss 3, p 035007 (2019)
Quantum-light sources based on semiconductor quantum dots (QDs) are promising candidates for many applications in quantum photonics and quantum communication. Important emission characteristics of such emitters, namely the single-photon purity and ph
Externí odkaz:
https://doaj.org/article/f41109c226a84505b38a07c7070a633a
Autor:
Peter Schnauber, Alexander Thoma, Christoph V. Heine, Alexander Schlehahn, Liron Gantz, Manuel Gschrey, Ronny Schmidt, Caspar Hopfmann, Benjamin Wohlfeil, Jan-Hindrick Schulze, André Strittmatter, Tobias Heindel, Sven Rodt, Ulrike Woggon, David Gershoni, Stephan Reitzenstein
Publikováno v:
Technologies, Vol 4, Iss 1, p 1 (2015)
We report on enhancing the photon-extraction efficiency (PEE) of deterministic quantum dot (QD) microlenses via anti-reflection (AR) coating. The AR-coating deposited on top of the curved microlens surface is composed of a thin layer of Ta2O5, and is
Externí odkaz:
https://doaj.org/article/4e537bc2b40a4973810bdc8c95467831
High-Q Trampoline Resonators from Strained Crystalline InGaP for Integrated Free-Space Optomechanics
Autor:
Sushanth Kini Manjeshwar, Anastasiia Ciers, Fia Hellman, Jürgen Bläsing, André Strittmatter, Witlef Wieczorek
Publikováno v:
Nano Letters.
Tensile-strained materials have been used to fabricate nano- and micromechanical resonators with ultra-low mechanical dissipation in the kHz to MHz frequency range. These mechanical resonators are of particular interest for force sensing applications
Autor:
Armin Dadgar, Florian Hörich, Ralf Borgmann, Jürgen Bläsing, Gordon Schmidt, Peter Veit, Jürgen Christen, André Strittmatter
Publikováno v:
physica status solidi (a). 220
Autor:
P. Giudici, E. Yaccuzzi, María Reinoso, Juan Carlos Plá, André Strittmatter, E J Di Liscia, M. Alurralde
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :68-75
The knowledge of the consequences of charged particles interaction with semiconductor materials is of paramount interest to study the performance of devices for space applications. Particularly, GaAs is one of the most used for device development. He
Autor:
Elias Kluth, A F M Anhar Uddin Bhuiyan, Lingyu Meng, Jürgen Bläsing, Hongping Zhao, André Strittmatter, Rüdiger Goldhahn, Martin Feneberg
Publikováno v:
Japanese Journal of Applied Physics. 62:051001
The anisotropic dielectric functions (DF) of corundum structured m-plane α-(Al x Ga1−x )2O3 thin films (up to x = 0.76) grown on m-plane sapphire substrate by metalorganic CVD have been investigated. IR and visible–UV spectroscopic ellipsometry
Autor:
Seshagiri Rao Challa, Christian Kristukat, M.E. Debray, André Strittmatter, Nahuel A. Mueller, Armin Dadgar, Hartmut Witte, Nahuel Vega
Publikováno v:
IEEE Transactions on Electron Devices. 68:24-28
AlInN/GaN on Si high-electron mobility transistors (HEMTs) are irradiated with various fluences of 75-MeV sulfur ions to study the radiation-induced degradation mechanisms. Heavy-ion irradiation has been found to reduce saturation ON- and OFF-state c
Autor:
Grzegorz Sęk, André Strittmatter, Stephan Reitzenstein, Nicole Srocka, David Quandt, Marek Burakowski, Paweł Holewa, Anna Musiał, Sven Rodt
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
Scientific Reports
Scientific Reports
Single-photon sources are key building blocks in most of the emerging secure telecommunication and quantum information processing schemes. Semiconductor quantum dots (QD) have been proven to be the most prospective candidates. However, their practica
Autor:
Seshagiri Rao Challa, André Strittmatter, Hartmut Witte, Gordon Schmidt, Jürgen Christen, Nahuel Vega, Nahuel Muller, Armin Dadgar, M.E. Debray, Christian Kristukat, Romualdo A. Ferreyra
Publikováno v:
IEEE Transactions on Nuclear Science. 66:2417-2421
AlInN/GaN heterostructure field-effect transistors (HFETs) grown on silicon withstand irradiation with 75-MeV sulfur ions up to fluences of $5.5 \times 10 ^{13}$ ions/cm2. The static transistor operation characteristics of the devices exhibit a shift