Zobrazeno 1 - 10
of 53
pro vyhledávání: '"André Rocher"'
Autor:
D. Bensahel, A. Tiberj, Vincent Paillard, N. Kernevez, M. N. Séméria, Bruno Ghyselen, Hubert Moriceau, Etienne Snoeck, André Rocher, C. Di Nardo, Alain Claverie, Pascal Besson, Thomas Ernst, J.M. Hartmann, Alexandra Abbadie, Cecile Aulnette, Anne Ponchet, Fuccio Cristiano, Frank Fournel, Olivier Rayssac, M. Cabié, Francois Andrieu, I. Cayrefourq, Laetitia Vincent, Philippe Boucaud, Carlos Mazure, Y. Bogumilowicz, Benedite Osternaud, Nicolas Daval
Publikováno v:
Solid-State Electronics. 48:1285-1296
Strained silicon on insulator wafers are today envisioned as a natural and powerful enhancement to standard SOI wafers and/or bulk-like strained Si layers. This paper is intended to demonstrate through miscellaneous structural results how a layer tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80645e4dd32d70e3eedeaa9e232397ed
https://doi.org/10.1016/j.sse.2004.01.011
https://doi.org/10.1016/j.sse.2004.01.011
Publikováno v:
The European Physical Journal Applied Physics. 26:87-94
The misfit stress induced by a lattice mismatch is determined by a curvature analysis performed by Transmission Electron Microscopy on plan view samples. The different samples examined consist of Ga $_{1-x}$ In x As layers grown by molecular beam epi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d735caecec5cecc4714558586895ab6
https://doi.org/10.1051/epjap:2004026
https://doi.org/10.1051/epjap:2004026
Autor:
J.-P. Contour, A. Barthélémy, D. Imhoff, Olivier Durand, F. Pailloux, R. Lyonnet, André Rocher, Jean-Luc Maurice
Publikováno v:
Philosophical Magazine. 83:3201-3224
With a Curie point at 370 K, the half-metal (La0.7Sr0.3)MnO3 (LSMO) is one of the most interesting candidates for electronic devices based on tunnel magnetoresistance. SrTiO3 (STO) is up to now the best substrate for the epitaxy of suitable thin film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eea92ad82b6704f1c3e9cf346e49a592
https://doi.org/10.1080/14786430310001603436
https://doi.org/10.1080/14786430310001603436
Autor:
J.-P. Contour, Olivier Durand, F. Pailloux, Jean-Luc Maurice, R. Lyonnet, Alain Barthélémy, André Rocher
Publikováno v:
Applied Surface Science. 188:176-181
We study the epitaxial growth of (La 0.7 Sr 0.3 )MnO 3 on SrTiO 3 by pulsed laser deposition. This paper presents some magnetic and structural properties of these films, with the stress on very thin films (5 and 23 nm). We show that such films, altho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5eb47daf45937387172fa26c0a4fc103
https://doi.org/10.1016/s0169-4332(01)00732-2
https://doi.org/10.1016/s0169-4332(01)00732-2
Publikováno v:
Applied Surface Science. 188:55-60
TEM studies have been performed in order to evaluate the amplitude and the uniformity of the strain field of epitaxial layers. Using adequate two-beam conditions, moire patterns allow us to measure independently the misfit strain components parallel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc6d7fc41a703fc47c548a67ab918020
https://doi.org/10.1016/s0169-4332(01)00728-0
https://doi.org/10.1016/s0169-4332(01)00728-0
Publikováno v:
Materials Science and Engineering: B. 88:181-185
We have used the kinetic Monte Carlo technique to reproduce some features of 3D growth with experimental reference to the case of GaSb/GaAs(001). We have shown that step edges can act as preferential sites for the nucleation of misfit dislocations. W
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74f632d0668ade05fde38f79413b2db5
https://doi.org/10.1016/s0921-5107(01)00901-1
https://doi.org/10.1016/s0921-5107(01)00901-1
Autor:
Etienne Snoeck, André Rocher
Publikováno v:
Materials Science and Engineering: B. 67:62-69
The epitaxial growth and the relaxation of lattice mismatched heterostructures is discussed in terms of misfit dislocations. Two experimental cases are studied: (i) a GaSb/GaAs system perfectly relaxed by a misfit dislocation network characterised as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c75661fb531aafc0e092242342f187d
https://doi.org/10.1016/s0921-5107(99)00210-x
https://doi.org/10.1016/s0921-5107(99)00210-x
Publikováno v:
Thin Solid Films. 336:277-280
We have simulated the growth of GaSb/(00l)GaAs, and we have focused our study on the defects creation at the DA and DB double steps on the substrate. A Monte Carlo scheme associated with a valence force field approximation is used to describe, respec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::019514cd2aa0fe96c4e9104e855dfddf
https://doi.org/10.1016/s0040-6090(98)01312-1
https://doi.org/10.1016/s0040-6090(98)01312-1
Autor:
Etienne Snoeck, André Rocher
Publikováno v:
Thin Solid Films. 319:172-176
The crystalline structures of metamorphic III–V heterostructures, GaSb/(001)GaAs and GaAs/(001)InP, have been studied by image analyses of high resolution electron microscopy (HREM) micrographs. Digital processing has been performed in order to eva
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6d3c4787d6d4b275ef682e3ff541a78
https://doi.org/10.1016/s0040-6090(97)01116-4
https://doi.org/10.1016/s0040-6090(97)01116-4
Autor:
Roland Guérin, Guy Jézéquel, Stéphanie Députier, J. Crestou, André Rocher, C. Cohen, Bruno Lépine, A. Filipe, F. Abel, S. Ababou, A. Guivarc'h, Alain Schuhl
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, 1998, 83 (6), pp.3077-3080. ⟨10.1063/1.367063⟩
Journal of Applied Physics, American Institute of Physics, 1998, 83 (6), pp.3077-3080. ⟨10.1063/1.367063⟩
Journal of Applied Physics, 1998, 83 (6), pp.3077-3080. ⟨10.1063/1.367063⟩
Journal of Applied Physics, American Institute of Physics, 1998, 83 (6), pp.3077-3080. ⟨10.1063/1.367063⟩
International audience; We have used a set of complementary experimental techniques to characterize an epitaxial structure (25 nm Fe)/GaAs(001) annealed at 450 °C under ultrahigh vacuum conditions. The solid state interdiffusion leads to the formati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf159e3e797b170c9207a49786157e8b
https://doi.org/10.1063/1.367063
https://doi.org/10.1063/1.367063