Fabrication of monocrystalline 3C–SiC resonators for MHz frequency sensors applications

Autor: Gabriel Ferro, Philippe Godignon, Gabriel Abadal, Marcel Placidi, André Leycuras, Thierry Chassagne, Narcis Mestres

Publikováno v: Sensors and Actuators B: Chemical. 133:276-280

Modern microelectronics and micromachining are based on crystalline silicon. The increasing demand for sensors able to operate in harsh environment, as temperature above 300 °C, high pressures, intense vibrations or corrosive liquids, has stimulated

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b722621f8c0deba7e5494a326a717608
https://doi.org/10.1016/j.snb.2007.07.148

Trends in Dopant Incorporation for 3C-SiC Films on Silicon

Autor: Bernard Boyer, Marcin Zielinski, André Leycuras, Marc Portail, Hervé Peyre, Jean Camassel, Thierry Chassagne, S. Ndiaye

Publikováno v: Materials Science Forum. :207-210

We have investigated the influence of several growth parameters on the incorporation of doping species in the case of 3C-SiC layers grown by CVD on silicon. This includes nitrogen (both intentional and residual) as well as residual aluminum. All conc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::aea90b05a90fe57c8326799e3dbf023e
https://doi.org/10.4028/www.scientific.net/msf.556-557.207

Behaviour of the 3C-SiC(100) c(2 × 2) (C-terminated) and 3 × 2 (Si-rich) surface reconstructions upon initial H2/CH4 microwave plasma exposures

Autor: P. Bergonzo, Marc Portail, P. Soukiassian, S. Delclos, André Leycuras, S. Saada, Th. Chassagne, J. C. Arnault

Publikováno v: physica status solidi (a). 202:2234-2239

We present a comparative study of C-terminated and Si-rich 3C-SiC(100) surfaces exposed to a H 2 /CH 4 microwave plasma used in diamond growth. Each surface is characterized before and after short plasma exposures using LEED, XPS and STM techniques.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::61d0b87a118ef23b538b89cdf95ad424
https://doi.org/10.1002/pssa.200561921

Control of 3C-SiC/Si wafer bending by the 'checker-board' carbonization method

Autor: Fillip Soares, Caroline Le Blanc, Yves Monteil, Gabriel Ferro, Sandrine Juillaguet, Hugues Mank, H. Haas, Jean Camassel, André Leycuras, Carole Balloud, Philippe Arcade, Thierry Chassagne, Hervé Peyre

Publikováno v: Physica status solidi. A. Applied research
International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC 2004)
International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC 2004), Jun 2004, MONTPELLIER, France. pp.524-530, ⟨10.1002/pssa.200460415⟩

Due to the large difference in lattice parameters and thermal expansion coefficients, the hetero-epitaxial growth of 3C-SiC on Si mainly results in highly defective layers on strongly bent wafers. The defects may not be detrimental for very basic app

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9a0d6f760108b72e90e74eca93c12c8b
https://doi.org/10.1002/pssa.200460415

Checker-Board Carbonization for Control and Reduction of the Mean Curvature of 3C-SiC Layers Grown on Si(100) Substrates

Autor: H. Haas, André Leycuras, Thierry Chassagne, Gabriel Ferro, Hugues Mank, Yves Monteil

Publikováno v: Materials Science Forum. :265-268

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::307a8cec3f1bb9b3d92b4d2c1030fc36
https://doi.org/10.4028/www.scientific.net/msf.457-460.265