Zobrazeno 1 - 10
of 64
pro vyhledávání: '"André Joullié"'
Autor:
M. Debbichi, Yvan Cuminal, Philippe Christol, Moncef Said, A. Bhouri, André Joullié, Jean-Louis Lazzari, A. Ben Fredj
Publikováno v:
Materials Science and Engineering: C
Materials Science and Engineering: C, 2008, 28 (5-6), pp.751-754. ⟨10.1016/j.msec.2007.10.072⟩
Materials Science and Engineering: C, Elsevier, 2008, 28 (5-6), pp.751-754. ⟨10.1016/j.msec.2007.10.072⟩
Materials Science and Engineering: C, 2008, 28 (5-6), pp.751-754. ⟨10.1016/j.msec.2007.10.072⟩
Materials Science and Engineering: C, Elsevier, 2008, 28 (5-6), pp.751-754. ⟨10.1016/j.msec.2007.10.072⟩
We report on optical gain calculations of a dilute-nitride mid-infrared laser structure designed to be grown on InAs substrate. The active region is composed of several strain-compensated type-II “W”-like InAsN/GaSb/InAsN quantum wells adapted to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d73306e4e68af36998b881aa32d50e1
https://doi.org/10.1016/j.msec.2007.10.072
https://doi.org/10.1016/j.msec.2007.10.072
Autor:
Biswarup Satpati, André Joullié, Eric Tournié, Philippe Christol, Jean-Baptiste Rodriguez, Achim Trampert
Publikováno v:
Journal of Crystal Growth
Journal of Crystal Growth, Elsevier, 2007, 301-302, pp.889-892. ⟨10.1016/j.jcrysgro.2006.11.284⟩
Journal of Crystal Growth, Elsevier, 2007, 301-302, pp.889-892. ⟨10.1016/j.jcrysgro.2006.11.284⟩
We report on the structural characterization of short period type-II InAs/GaSb superlattices (SLs) adapted for mid-infrared detection. These structures, grown by molecular beam epitaxy (MBE) on n-type GaSb substrates, are made up of 10 InAs monolayer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5760e190e56d32d5297d916f770d9e71
https://doi.org/10.1016/j.jcrysgro.2006.11.284
https://doi.org/10.1016/j.jcrysgro.2006.11.284
Autor:
André Joullié, H. Aït-Kaci, Leszek Konczewicz, Yvan Cuminal, Jean-Baptiste Rodriguez, Philippe Christol
Publikováno v:
physica status solidi (c)
physica status solidi (c), Wiley, 2007, 4 (4), pp.1494-1498. ⟨10.1002/pssc.200674136⟩
physica status solidi (c), Wiley, 2007, 4 (4), pp.1494-1498. ⟨10.1002/pssc.200674136⟩
Electrical properties in the temperature range between 80 K and 300 K of type-II short period InAs/GaSb superlattice (SL) photodiode are reported. Resistivity and Hall measurements have been carried out on a 300 periods unintentionally doped SL grown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::421ff5c45aea5933dc6d756ac6ae263f
https://doi.org/10.1002/pssc.200674136
https://doi.org/10.1002/pssc.200674136
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures
Physica E: Low-dimensional Systems and Nanostructures, Elsevier, 2005, 28, pp.128. ⟨10.1016/j.physe.2005.02.007⟩
Physica E: Low-dimensional Systems and Nanostructures, Elsevier, 2005, 28, pp.128. ⟨10.1016/j.physe.2005.02.007⟩
Type-II InAs(N)/GaSb(N) superlattices (SLs) where the SL's period is composed by equal number N of InAs and GaSb monolayers (MLs) have been grown by solid source molecular beam epitaxy on n-type GaSb substrate. These SLs are made up of 100 periods wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d7440ebe12a299fccd94af3e9021758c
https://doi.org/10.1016/j.physe.2005.02.007
https://doi.org/10.1016/j.physe.2005.02.007
Publikováno v:
Journal of Crystal Growth
Journal of Crystal Growth, Elsevier, 2005, 274 (1-2), pp. 6-13. ⟨10.1016/j.jcrysgro.2004.09.088⟩
Journal of Crystal Growth, Elsevier, 2005, 274 (1-2), pp. 6-13. ⟨10.1016/j.jcrysgro.2004.09.088⟩
International audience; Type-II InAs/GaSb superlattices (SLs) made of 10 InAs monolayers (MLs) and 10 GaSb MLs, designed to have a cut-off wavelength of 5.4μm, have been grown on GaSb substrates by solid source molecular beam epitaxy (MBE). In order
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ca8d2ff07e4c886509db954c918b68a
https://doi.org/10.1016/j.jcrysgro.2004.09.088
https://doi.org/10.1016/j.jcrysgro.2004.09.088
Autor:
Pierre Grech, E. Hulicius, A. Wilk, Jiří Oswald, M. El Gazouli, T. Šimeček, Bernard Fraisse, André Joullié, Guilhem Boissier, Philippe Christol, Frédéric Genty
Publikováno v:
Journal of Crystal Growth
Journal of Crystal Growth, Elsevier, 2001, 223 (3), pp.341-348. ⟨10.1016/S0022-0248(01)00600-5⟩
Journal of Crystal Growth, Elsevier, 2001, 223 (3), pp.341-348. ⟨10.1016/S0022-0248(01)00600-5⟩
The growth by solid source molecular beam epitaxy (MBE) of type-II InAsSb/InAs multi-quantum well laser diodes on InAs has been studied. Strained InAsSb/InAs quantum wells were sandwiched between two AlAs 0.16 Sb 0.84 2 μm-thick cladding layers, lat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eb8ad0a3158bad72e3cf3607c4e06fef
https://doi.org/10.1016/s0022-0248(01)00600-5
https://doi.org/10.1016/s0022-0248(01)00600-5
Autor:
André Joullié, A. Stein, O. Gilard, P. Bigenwald, J. Kluth, H. Carrere, K. Heime, E.M. Skouri, P. Christol, F. Lozes-Dupuy, A. Behres, A. Wilk
Publikováno v:
IEE Proceedings Optoelectronics
IEE Proceedings Optoelectronics, 2000, 147 (3), pp.181-187. ⟨10.1049/ip-opt:20000479⟩
IEE Proceedings Optoelectronics, Institution of Engineering and Technology, 2000, 147 (3), pp.181-187. ⟨10.1049/ip-opt:20000479⟩
IEE Proceedings Optoelectronics, 2000, 147 (3), pp.181-187. ⟨10.1049/ip-opt:20000479⟩
IEE Proceedings Optoelectronics, Institution of Engineering and Technology, 2000, 147 (3), pp.181-187. ⟨10.1049/ip-opt:20000479⟩
Strained InAs1−xSbx(0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5c0715f58be603ee1830348dc8246d4c
https://doi.org/10.1049/ip-opt:20000479
https://doi.org/10.1049/ip-opt:20000479
Autor:
A. Wilk, Pierre Grech, R. Blondeau, Alexei N. Baranov, Michel Garcia, André Joullié, Yvan Cuminal, G. Glastre, J.-C. Nicolas, C. Alibert
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 5:711-714
Ridge-waveguide laser diodes emitting near 2.38 /spl mu/m have been fabricated from GaInAsSb-GaSb type-II quantum-well (QW) structures grown by molecular beam epitaxy. These devices operated continuous-wave (CW) at room temperature, what is obtained
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b88782442750e46740c955a4047fe73d
https://doi.org/10.1109/2944.788440
https://doi.org/10.1109/2944.788440
Autor:
M. Debbichi, Jean-Louis Lazzari, A. Bhouri, André Joullié, Philippe Christol, Yvan Cuminal, Moncef Said, A. Ben Fredj
Publikováno v:
physica status solidi c. 4:592-594
A new class of dilute-nitride laser structure to be grown on InAs substrate is simulated for room temperature emission near 3.3 µm. The active region is composed of several strain-compensated type-II InAsN/GaSb/InAsN quantum wells having the “W”
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01b6d35efafa77fedeca638e6984bbba
https://doi.org/10.1002/pssc.200673246
https://doi.org/10.1002/pssc.200673246
Autor:
Guilhem Almuneau, Alexei N. Baranov, Nicolas Bertru, Oliver Brandt, André Joullié, Yvan Cuminal, Frédéric Genty, A. Mazuelas, K. H. Ploog
Publikováno v:
Semiconductor Science and Technology. 13:936-940
The molecular beam epitaxy growth of strained (Ga, In)Sb/GaSb quantum wells is investigated. In a narrow range of growth conditions, (Ga, In)Sb quantum well structures exhibiting excellent structural properties as well as intense and narrow photolumi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca501eaa9f060dd000b973f339bc5dea
https://doi.org/10.1088/0268-1242/13/8/019
https://doi.org/10.1088/0268-1242/13/8/019