Zobrazeno 1 - 9
of 9
pro vyhledávání: '"André, Stapf"'
Publikováno v:
Chemistry of Inorganic Materials, Vol 3, Iss , Pp 100063- (2024)
Solutions containing hydrofluoric acid (HF), hydrobromic acid (HBr) and bromine (Br2) were investigated as novel acidic, NOx-free mixtures for wet-chemical etching of silicon wafers. HF–Br2-mixtures exhibit isotropic etching behaviour towards silic
Externí odkaz:
https://doaj.org/article/f32bbbc5629446549b93ed7706290f73
Publikováno v:
Chemical Communications. 56:13631-13633
29Si enrichment would be advantageous for many NMR studies of the structural properties of sol-gel derived materials. The required starting materials (29Si enriched alkoxysilanes), however, are expensive and difficult to provide. Here we present a sc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::198aa39fc738696b12f2c4fa3f97a5ef
https://doi.org/10.1039/d0cc05525e
https://doi.org/10.1039/d0cc05525e
Autor:
Robert, Gericke, Christoph, Gondek, André, Stapf, Jörg, Wagler, Edwin, Kroke, Erica, Brendler
Publikováno v:
Chemical communications (Cambridge, England). 56(88)
29Si enrichment would be advantageous for many NMR studies of the structural properties of sol-gel derived materials. The required starting materials (29Si enriched alkoxysilanes), however, are expensive and difficult to provide. Here we present a sc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::990b3b35a68927f87a3b96e4d194de28
https://pubmed.ncbi.nlm.nih.gov/33057474
https://pubmed.ncbi.nlm.nih.gov/33057474
Publikováno v:
Journal of The Electrochemical Society. 165:H3045-H3050
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2af9d4b67980345100bce35906fef3f5
https://doi.org/10.1149/2.0061804jes
https://doi.org/10.1149/2.0061804jes
Publikováno v:
Solar Energy Materials and Solar Cells. 159:112-120
Solutions containing hydrofluoric acid (HF), hydrochloric acid (HCl), and hydrogen peroxide (H2O2) were investigated as novel acidic, NOx-free etching mixtures for texturing of monocrystalline silicon wafers. High etch rates of up to 13.3 nm s−1 we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b04dcb0bcaaae4c87b2a1574ae2959a1
https://doi.org/10.1016/j.solmat.2016.08.034
https://doi.org/10.1016/j.solmat.2016.08.034
Publikováno v:
The Journal of Physical Chemistry C. 120:22349-22357
Aqueous acidic ozone (O3)-containing solutions are increasingly used for silicon treatment in photovoltaic and semiconductor industries. We studied the behavior of aqueous hydrofluoric acid (HF)-containing solutions (i.e., HF–O3, HF–H2SO4–O3, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41687db2430cae999449aeafd67a5d63
https://doi.org/10.1021/acs.jpcc.6b06332
https://doi.org/10.1021/acs.jpcc.6b06332
Publikováno v:
Handbook of Photovoltaic Silicon ISBN: 9783662527351
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3694b79a55b65991c4d66c981d16bb50
https://doi.org/10.1007/978-3-662-52735-1_17-2
https://doi.org/10.1007/978-3-662-52735-1_17-2
Publikováno v:
ACS Applied Materials & Interfaces. 7:8733-8742
The wet-chemical treatment of silicon wafers is an important production step in photovoltaic and semiconductor industries. Solutions containing hydrofluoric acid, ammonium peroxodisulfate, and hydrochloric acid were investigated as novel acidic, NOx-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a5cad9de7e7c82a56c7744779452f2f
https://doi.org/10.1021/acsami.5b01059
https://doi.org/10.1021/acsami.5b01059
Publikováno v:
physica status solidi (a). 214:1700152
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::520f81c552eb060072718bdffba6363e
https://doi.org/10.1002/pssa.201700152
https://doi.org/10.1002/pssa.201700152