Zobrazeno 1 - 10
of 12
pro vyhledávání: '"András Csóré"'
10th Hungarian Conference on Materials ScienceSelected, peer reviewed papers from the 10th Hungarian Conference on Materials Science, October 11-13, 2015, Balatonalmádi, Hungary
Autor:
Adam Gali, András Csóré
Publikováno v:
Wide Bandgap Semiconductors for Power Electronics. :503-528
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1ebff9a34107cf67a6c9eb9a991f89d
https://doi.org/10.1002/9783527824724.ch17
https://doi.org/10.1002/9783527824724.ch17
The negatively charged silicon vacancy (${\mathrm{V}}_{\text{Si}}^{\ensuremath{-}}$) in silicon carbide (SiC) is a paramagnetic and optically active defect in hexagonal SiC. The ${\mathrm{V}}_{\text{Si}}^{\ensuremath{-}}$ defect possesses $S=3/2$ spi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::39269956cb5187d307b3ef005f428a19
http://arxiv.org/abs/2104.04292
http://arxiv.org/abs/2104.04292
Autor:
András Csóré, Adam Gali
Publikováno v:
Physical Review B. 102
Paramagnetic point defects in solids may exhibit a rich set of interesting and not yet fully resolved physics. In particular, character of wavefunctions and electron-phonon coupling in these defects may highly influence their interaction with externa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d9f4007dbb792def40ce06ef6a44d169
https://doi.org/10.1103/physrevb.102.241201
https://doi.org/10.1103/physrevb.102.241201
Publikováno v:
Journal of Applied Physics. 131:071102
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd10d04e2ece8629e46788a8c93af3ca
https://doi.org/10.1063/5.0080514
https://doi.org/10.1063/5.0080514
Autor:
Adam Gali, András Csóré
Publikováno v:
Materials Science Forum. 897:269-274
Paramagnetic defects in solids have become attractive systems for quantum computing as well as magnetometry in recent years. One of the leading contenders is the negatively charged nitrogen-vacancy defect (NV center) in diamond proposed to be highly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6fcb2d813c69fc9491467bffddd8fc3
https://doi.org/10.4028/www.scientific.net/msf.897.269
https://doi.org/10.4028/www.scientific.net/msf.897.269
Determination of Dislocation Density in Lath Martensite by Means of Electron Backscatter Diffraction
Autor:
Péter János Szabó, András Csóré
Publikováno v:
Materials Science Forum. 885:275-279
As a novel procedure for determining dislocation density, a software was improved with which data obtained by Scanning Electron Microscope (SEM) measurements can be collected and the value of superficial dislocation density can be calculated. Applyin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc689bf70710e3b2a2ee24e9dc29be97
https://doi.org/10.4028/www.scientific.net/msf.885.275
https://doi.org/10.4028/www.scientific.net/msf.885.275
Publikováno v:
Materials Science Forum. 858:261-264
We investigated Molybdenum (Mo) defects in 4H silicon carbide (SiC). This system can be suitable candidate for in vivo biomarker applications since it shows photoluminescence (PL) in the near-infrared (NIR) region. In order to reveal the origin of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db6f17ba6ee16570f3830c2141e995d7
https://doi.org/10.4028/www.scientific.net/msf.858.261
https://doi.org/10.4028/www.scientific.net/msf.858.261
Publikováno v:
Materials Characterization. 113:117-124
The microstructure and the dislocation density in as-quenched ferrous lath martensite were studied by different methods. The blocks, packets and variants formed due to martensitic transformation were identified and their sizes were determined by elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aecbdc7a031472281d08693e8357ccfd
https://doi.org/10.1016/j.matchar.2015.11.014
https://doi.org/10.1016/j.matchar.2015.11.014
Autor:
Nguyen Tien Son, András Csóré, Ivan Gueorguiev Ivanov, Andreas Gällström, Takeshi Ohshima, Björn Magnusson, Adam Gali
We investigate the quenching of the photoluminescence (PL) from the divacancy defect in 4H-SiC consisting of a nearest-neighbour silicon and carbon vacancies. The quenching occurs only when the PL is excited below certain photon energies (thresholds)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::86d1c6446f22e2560b74c733584d9ebd
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-152805
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-152805