Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Andong Huang"'
Publikováno v:
Entropy, Vol 26, Iss 6, p 445 (2024)
Salient object detection (SOD) aims to accurately identify significant geographical objects in remote sensing images (RSI), providing reliable support and guidance for extensive geographical information analyses and decisions. However, SOD in RSI fac
Externí odkaz:
https://doaj.org/article/871db23f8a2245238ad04b989f772f4b
Publikováno v:
You-qi chuyun, Vol 41, Iss 4, Pp 411-417 (2022)
Automatic welding technology is widely used in the field welding of large-diameter and high-grade steel pipelines in China. Welding defects such as misalignment and cracks caused by various factors have seriously affected the deformation and bearing
Externí odkaz:
https://doaj.org/article/4b6a5667a4514e5d92464d62084ee8d9
Publikováno v:
Case Studies in Thermal Engineering, Vol 42, Iss , Pp 102742- (2023)
Erosion caused by solid particles is one of the important reasons for the failure of shale gas gathering pipelines. However, the erosion laws of right-angle pipe and blind tee were rarely compared in previous studies, and the parameter settings almos
Externí odkaz:
https://doaj.org/article/c69730f6bfd943d09c19b6a2ffe8e290
Publikováno v:
IEEE Access, Vol 7, Pp 160858-160869 (2019)
Empirical models have been widely and successfully used in device modeling in the past few decades. However, they are becoming increasingly intricate to accurately capture the complex thermal effects in semiconductor devices. Therefore, the aim of th
Externí odkaz:
https://doaj.org/article/264fd91e5f4e4905ba1f7d98d65df26f
Autor:
Bingyuan Hong, Yanbo Li, Xiaoping Li, Gen Li, Andong Huang, Shuaipeng Ji, Weidong Li, Jing Gong, Jian Guo
Publikováno v:
Petroleum Science. 19:1347-1360
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a00f4c23cfd1a8b47bbadd8e72e6bfe6
https://doi.org/10.1016/j.petsci.2022.01.011
https://doi.org/10.1016/j.petsci.2022.01.011
Autor:
Zhixiong Peng, Andong Huang
Publikováno v:
Medicine. 101(38)
Cytoreductive radical prostatectomy (RP), transurethral resection of the prostate, and radiation therapy were the main local treatments for oligometastatic prostate cancer (PCa). An optimal local treatment for metastases PCa was not consensus. The pu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ece2f7e23e48ce5603ce1a5a1b5fc5a4
https://pubmed.ncbi.nlm.nih.gov/36197186
https://pubmed.ncbi.nlm.nih.gov/36197186
Publikováno v:
IEEE Transactions on Industrial Electronics. 66:7089-7098
An efficient and reconfigurable rectifier circuit, with the capability of automatically switching from low-power to high-power operation mode, is presented in this paper. The new topology allows the rectifier to convert RF power to dc power efficient
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f98466d55b92fb550cd157f6380e2fd
https://doi.org/10.1109/tie.2018.2875638
https://doi.org/10.1109/tie.2018.2875638
Publikováno v:
IEEE Access, Vol 7, Pp 160858-160869 (2019)
Empirical models have been widely and successfully used in device modeling in the past few decades. However, they are becoming increasingly intricate to accurately capture the complex thermal effects in semiconductor devices. Therefore, the aim of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3ca7a4ed7a06dedda1f69e694e0f134c
https://ieeexplore.ieee.org/document/8886403/
https://ieeexplore.ieee.org/document/8886403/
Publikováno v:
IEEE Transactions on Electron Devices. 65:3169-3175
In this paper, the buffer-related current collapse (CC) in AlGaN/GaN HEMTs is investigated by using pulsed I–V measurements and 2-D drift-diffusion simulations. The simulation results indicate that the negative potential (NP), appearing in the Fe-d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2697443636c3aa238e0d6a2bdc921d9
https://doi.org/10.1109/ted.2018.2849501
https://doi.org/10.1109/ted.2018.2849501
Publikováno v:
IEEE Access, Vol 6, Pp 39422-39434 (2018)
This paper presents a general dimension reduction method for the dispersion modeling of current and charge sources of semiconductor devices including HEMTs, LDMOS, and HBTs. The dimensions that are easily handled are represented by the existing empir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0c1189577bc84a53c3678ab39e87268c
https://doi.org/10.1109/access.2018.2855044
https://doi.org/10.1109/access.2018.2855044