Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Andong Hua"'
Autor:
Lichaoran Guan, He Cao, Yishi Su, Di Zhang, Kan Liu, Andong Hua, Yahui Peng, Haitao Zhao, Qiubao Ouyang
Publikováno v:
Materials & Design, Vol 245, Iss , Pp 113186- (2024)
To overcome the strength-ductility conflict in particle reinforced aluminum matrix composites (PRAMCs), a novel dual configuration strategy of microstructure was proposed in this work. The dual configuration including both heterogeneous grain structu
Externí odkaz:
https://doaj.org/article/3528dd4a3e124cc088d89d2db39c6231
Publikováno v:
Materials Characterization. 201:112896
Publikováno v:
Materials Science and Engineering: A. 877:145152
Publikováno v:
Materials Science and Engineering: A. 857:143987
Publikováno v:
Materials Characterization. 193:112243
Publikováno v:
Entropy, Vol 26, Iss 6, p 445 (2024)
Salient object detection (SOD) aims to accurately identify significant geographical objects in remote sensing images (RSI), providing reliable support and guidance for extensive geographical information analyses and decisions. However, SOD in RSI fac
Externí odkaz:
https://doaj.org/article/871db23f8a2245238ad04b989f772f4b
Publikováno v:
You-qi chuyun, Vol 41, Iss 4, Pp 411-417 (2022)
Automatic welding technology is widely used in the field welding of large-diameter and high-grade steel pipelines in China. Welding defects such as misalignment and cracks caused by various factors have seriously affected the deformation and bearing
Externí odkaz:
https://doaj.org/article/4b6a5667a4514e5d92464d62084ee8d9
Publikováno v:
Case Studies in Thermal Engineering, Vol 42, Iss , Pp 102742- (2023)
Erosion caused by solid particles is one of the important reasons for the failure of shale gas gathering pipelines. However, the erosion laws of right-angle pipe and blind tee were rarely compared in previous studies, and the parameter settings almos
Externí odkaz:
https://doaj.org/article/c69730f6bfd943d09c19b6a2ffe8e290
Publikováno v:
IEEE Access, Vol 7, Pp 160858-160869 (2019)
Empirical models have been widely and successfully used in device modeling in the past few decades. However, they are becoming increasingly intricate to accurately capture the complex thermal effects in semiconductor devices. Therefore, the aim of th
Externí odkaz:
https://doaj.org/article/264fd91e5f4e4905ba1f7d98d65df26f