Zobrazeno 1 - 10
of 337
pro vyhledávání: '"Anderson, W.T"'
Publikováno v:
COMPEL -The international journal for computation and mathematics in electrical and electronic engineering, 1994, Vol. 13, Issue 4, pp. 641-652.
Externí odkaz:
http://www.emeraldinsight.com/doi/10.1108/eb051881
Autor:
Anderson, W.T., Sternberg, L.S.L., Pinzon, M.C., Gann-Troxler, T., Childers, D.L., Duever, M.
Publikováno v:
In Dendrochronologia 2005 23(1):1-10
Publikováno v:
In Solid State Electronics 2002 46(1):123-131
Publikováno v:
In Chemical Geology 2002 182(2):121-137
Publikováno v:
In Microelectronics Reliability 2001 41(8):1109-1113
Failure mechanisms in AlGaAs/GaAs high electron mobility transistors (HEMTs) life tested under high temperature storage, high temperature with d.c. bias, and high temperature with d.c. bias under r.f. drive have been determined to differ significantl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::c4b2229c2ea5fd016effaa1490c93fdb
https://publica.fraunhofer.de/handle/publica/186181
https://publica.fraunhofer.de/handle/publica/186181
Autor:
Jones, J.A.G., Anderson, W.T.
Publikováno v:
Industrial & Commercial Training. Mar74, Vol. 6 Issue 3, p107-111. 5p. 1 Diagram.
Publikováno v:
International Journal of Electronics. Oct93, Vol. 75 Issue 4, p641. 5p.
Publikováno v:
2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602); 2001, p3-11, 9p