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pro vyhledávání: '"Anderson, Evan P."'
Autor:
Anderson, Evan J. D., Eyre, Christopher K., Dailey, Isabel M., Rozpędek, Filip, Bash, Boulat A.
We explore covert communication of qubits over the lossy thermal-noise bosonic channel, which is a quantum-mechanical model of many practical channels, including optical. Covert communication ensures that an adversary is unable to detect the presence
Externí odkaz:
http://arxiv.org/abs/2401.06764
Autor:
Young, Steve M., Katzenmeyer, Aaron M., Anderson, Evan M., Luk, Ting S., Ivie, Jeffrey A., Schmucker, Scott W., Gao, Xujiao, Misra, Shashank
The classical Drude model provides an accurate description of the plasma resonance of three-dimensional materials, but only partially explains two-dimensional systems where quantum mechanical effects dominate such as P:$\delta$-layers - atomically th
Externí odkaz:
http://arxiv.org/abs/2210.10711
Autor:
Anderson, Evan J. D., Bash, Boulat A.
Bosonic channels describe quantum-mechanically many practical communication links such as optical, microwave, and radiofrequency. We investigate the maximum rates for the bosonic multiple access channel (MAC) in the presence of thermal noise added by
Externí odkaz:
http://arxiv.org/abs/2207.00139
Autor:
Anderson, Evan D., Wilcox, Ramsey, Nayak, Anuj, Zwilling, Christopher, Robles-Granda, Pablo, Kim, Been, Varshney, Lav R., Barbey, Aron K.
Individual differences in human intelligence can be modeled and predicted from in vivo neurobiological connectivity. Many established modeling frameworks for predicting intelligence, however, discard higher-order information about individual differen
Externí odkaz:
http://arxiv.org/abs/2203.00707
Autor:
Halsey, Connor, Depoy, Jessica, Campbell, DeAnna M., Ward, Daniel R., Anderson, Evan M., Schmucker, Scott W., Ivie, Jeffrey A., Gao, Xujiao, Scrymgeour, David A., Misra, Shashank
As transistor features shrink beyond the 2 nm node, studying and designing for atomic scale effects become essential. Being able to combine conventional CMOS with new atomic scale fabrication routes capable of creating 2D patterns of highly doped pho
Externí odkaz:
http://arxiv.org/abs/2110.11580
Autor:
Ward, Daniel R., Schmucker, Scott W., Anderson, Evan M., Bussmann, Ezra, Tracy, Lisa, Lu, Tzu-Ming, Maurer, Leon N., Baczewski, Andrew, Campbell, Deanna M., Marshall, Michael T., Misra, Shashank
Publikováno v:
Electronic Device Failure Analysis, 22 (2020) 1:4-10
An exponential increase in the performance of silicon microelectronics and the demand to manufacture in great volumes has created an ecosystem that requires increasingly complex tools to fabricate and characterize the next generation of chips. Howeve
Externí odkaz:
http://arxiv.org/abs/2002.11003
Autor:
Anderson, Evan M., Campbell, DeAnna M., Maurer, Leon N., Baczewski, Andrew D., Marshall, Michael T., Lu, Tzu-Ming, Lu, Ping, Tracy, Lisa A., Schmucker, Scott W., Ward, Daniel R., Misra, Shashank
Atomic precision advanced manufacturing (APAM) offers creation of donor devices in an atomically thin layer doped beyond the solid solubility limit, enabling unique device physics. This presents an opportunity to use APAM as a pathfinding platform to
Externí odkaz:
http://arxiv.org/abs/2002.09075
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