Zobrazeno 1 - 10
of 247
pro vyhledávání: '"Anderson, Evan M."'
Autor:
Young, Steve M., Katzenmeyer, Aaron M., Anderson, Evan M., Luk, Ting S., Ivie, Jeffrey A., Schmucker, Scott W., Gao, Xujiao, Misra, Shashank
The classical Drude model provides an accurate description of the plasma resonance of three-dimensional materials, but only partially explains two-dimensional systems where quantum mechanical effects dominate such as P:$\delta$-layers - atomically th
Externí odkaz:
http://arxiv.org/abs/2210.10711
Autor:
Halsey, Connor, Depoy, Jessica, Campbell, DeAnna M., Ward, Daniel R., Anderson, Evan M., Schmucker, Scott W., Ivie, Jeffrey A., Gao, Xujiao, Scrymgeour, David A., Misra, Shashank
As transistor features shrink beyond the 2 nm node, studying and designing for atomic scale effects become essential. Being able to combine conventional CMOS with new atomic scale fabrication routes capable of creating 2D patterns of highly doped pho
Externí odkaz:
http://arxiv.org/abs/2110.11580
Autor:
Ward, Daniel R., Schmucker, Scott W., Anderson, Evan M., Bussmann, Ezra, Tracy, Lisa, Lu, Tzu-Ming, Maurer, Leon N., Baczewski, Andrew, Campbell, Deanna M., Marshall, Michael T., Misra, Shashank
Publikováno v:
Electronic Device Failure Analysis, 22 (2020) 1:4-10
An exponential increase in the performance of silicon microelectronics and the demand to manufacture in great volumes has created an ecosystem that requires increasingly complex tools to fabricate and characterize the next generation of chips. Howeve
Externí odkaz:
http://arxiv.org/abs/2002.11003
Autor:
Anderson, Evan M., Campbell, DeAnna M., Maurer, Leon N., Baczewski, Andrew D., Marshall, Michael T., Lu, Tzu-Ming, Lu, Ping, Tracy, Lisa A., Schmucker, Scott W., Ward, Daniel R., Misra, Shashank
Atomic precision advanced manufacturing (APAM) offers creation of donor devices in an atomically thin layer doped beyond the solid solubility limit, enabling unique device physics. This presents an opportunity to use APAM as a pathfinding platform to
Externí odkaz:
http://arxiv.org/abs/2002.09075
Autor:
Anderson, Evan M.
Publikováno v:
Library Journal. Jun2024, Vol. 149 Issue 6, p114-115. 2p. 1 Color Photograph.
Publikováno v:
In Journal of Crystal Growth 15 October 2018 500:68-73
Autor:
Anderson, Evan M. *, Millunchick, Joanna M. *
Publikováno v:
In Surface Science January 2018 667:45-53
Akademický článek
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